SCHEMBL502069

SCHEMBL502069

O=C(OCCn1cnc2ccccc21)c1cccc2ccccc12

nearest known ligand 0.52

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 5/20 0.52
LMNA P02545 5/20 0.52
HTT P42858 2/20 0.50
EGLN3 Q9H6Z9 1/20 0.50
L3MBTL1 Q9Y468 1/20 0.50
HRH3 Q9Y5N1 2/20 0.49
TDP1 Q9NUW8 1/20 0.49
AGER Q15109 1/20 0.48
DRD3 P35462 1/20 0.47
RAB9A P51151 2/20 0.46
GAA P10253 1/20 0.46
CNR2 P34972 3/20 0.46
ALOX15 P16050 1/20 0.45
TSHR P16473 1/20 0.45
LTA4H P09960 1/20 0.44
CNR1 P21554 1/20 0.43
NPC1 O15118 1/20 0.43
PKM P14618 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24177947 0.81 L3MBTL1 (0.51) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL75393 0.80 EGLN3 (0.61) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL501881 0.79 SMN1; SMN2 (0.59) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL502049 0.77 SMN1; SMN2 (0.66) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL501298 0.76 PIN1 (0.57) SMN1; SMN2HRH3DRD3CNR2CNR1
SCHEMBL786986 0.76 CDC25B (0.61) L3MBTL1HRH3DRD3GAATSHR
SCHEMBL4791791 0.76 SMN1; SMN2 (0.61) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL501927 0.76 SMN1; SMN2 (0.58) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL24177942 0.75 SMN1; SMN2 (0.60) SMN1; SMN2LMNAHTTEGLN3L3MBTL1
SCHEMBL24177940 0.75 SMN1; SMN2 (0.66) SMN1; SMN2LMNAHTTEGLN3L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8268528-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-18 US disclosed
US-20100136482-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-06 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 SMN1; SMN2 4173/4885LMNA 3801/4885HTT 3546/4885
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L SMN1; SMN2 2410/4885LMNA 2631/4885HTT 1294/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L SMN1; SMN2 2488/4885LMNA 2856/4885HTT 1762/4885
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, EGLN1, RER1 SMN1; SMN2 3853/4885LMNA 621/4885HTT 3324/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R SMN1; SMN2 4504/4885LMNA 4448/4885HTT 4485/4885
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS ZYX, FOXO1, CAPZA1 SMN1; SMN2 2481/4885LMNA 567/4885HTT 4735/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.