Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 4/20 | 0.56 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.56 |
| ▸ | LTA4H | P09960 | 3/20 | 0.50 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.48 |
| ▸ | LMNA | P02545 | 5/20 | 0.44 |
| ▸ | NPC1 | O15118 | 4/20 | 0.44 |
| ▸ | TSHR | P16473 | 3/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.44 |
| ▸ | RAB9A | P51151 | 2/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.44 |
| ▸ | MAPT | P10636 | 2/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12743776 | 0.92 | CYP2D6 (0.59) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL10090149 | 0.88 | CYP2D6 (0.52) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL11092273 | 0.86 | LTA4H (0.52) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL1097894 | 0.85 | CYP2D6 (0.48) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL1870406 | 0.85 | CYP2D6 (0.48) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL1097898 | 0.85 | ALDH1A1 (0.60) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL14464147 | 0.85 | CYP2D6 (0.48) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL1623962 | 0.85 | TAAR1 (0.60) | CYP2D6CYP3A4LTA4HSMN1; SMN2KDM4E | |
| SCHEMBL2001722 | 0.85 | CYP2D6 (0.48) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA | |
| SCHEMBL11245903 | 0.85 | CYP2D6 (0.64) | CYP2D6CYP3A4LTA4HSMN1; SMN2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 589 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12624016-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-05-12 | — | — | US | disclosed |
| US-12619145-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-05-05 | — | — | US | disclosed |
| US-20260118758-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12607930-B2 | Carboxylate, carboxylic acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-04-21 | — | — | US | disclosed |
| US-12578639-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-03-17 | — | — | US | disclosed |
| US-12572071-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-03-10 | — | — | US | disclosed |
| US-12572072-B2 | Salt, acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-03-10 | — | — | US | disclosed |
| US-12566375-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-03-03 | — | — | US | disclosed |
| US-12547073-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2026-02-10 | — | — | US | disclosed |
| US-20260029710-A1 | ACID GENERATING AGENT, SALT, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICALS COMPANY, LIMITED (JP) | 2026-01-29 | — | — | US | disclosed |
| US-20040121259-A1 | a resin; a crosslinking agent; and a nitrogen-containing compound; manufacturing a semiconductor | FUJIITSU LIMITED (JP) | 2004-06-24 | — | — | US | disclosed |
| EP-1398671-A1 | Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-6696218-B2 | RESIN WHICH HAS A POLYMERIZATION UNIT DERIVED FROM P-HYDROXYSTYRENE AND A POLYMERIZATION UNIT HAVING A GROUP UNSTABLE AGAINST ACID, AND A DIALKANESULFONATE OF ISOPROPYLIDENEDICYCLOHEXANOL | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-02-24 | — | — | US | disclosed |
| US-20040029037-A1 | Amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-02-12 | — | — | US | disclosed |
| US-6689531-B2 | NOVOLAK PHOTORESISTS WITH IMPROVED ADHESION AT THE INTERFACE OF A SUBSTRATE; WET ETCHING, PHOTOSENSITIVITY, RESOLUTION AND HEAT RESISTANCE | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-02-10 | — | — | US | disclosed |
| US-20030148211-A1 | Sulfonium salt and use thereof | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-08-07 | — | — | US | disclosed |
| US-20030119957-A1 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-06-26 | — | — | US | disclosed |
| US-20030114589-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030013038-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-01-16 | — | — | US | disclosed |
| US-6284863-B1 | REACTED WITH UNSATURATED AMIDES THAT MAY BE CYCLIC, E.G., N-VINYL-2-PYRROLIDONE | SUMITOMO CHEMICAL COMPANY, LTD. (JP) | 2001-09-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12619145-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | MSR1, H1-4, ARG1 | CYP2D6 1823/4885CYP3A4 929/4885LTA4H 1849/4885 |
| US-20260118758-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, MSR1, CBR1 | CYP2D6 2414/4885CYP3A4 2384/4885LTA4H 1494/4885 |
| US-12607930-B2 | Carboxylate, carboxylic acid generator, resist composition and method for producing resist pattern | OXGR1, CBR1, HAO2 | CYP2D6 862/4885CYP3A4 869/4885LTA4H 1215/4885 |
| US-12578639-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | MSR1, RER1, RARA | CYP2D6 1326/4885CYP3A4 869/4885LTA4H 3277/4885 |
| US-12547073-B2 | Salt, acid generator, resist composition and method for producing resist pattern | HAO2, RER1, H1-10 | CYP2D6 1602/4885CYP3A4 2505/4885LTA4H 1857/4885 |
| US-12624016-B2 | Salt, acid generator, resist composition and method for producing resist pattern | CLIC4, SCO2, H1-0 | CYP2D6 642/4885CYP3A4 1448/4885LTA4H 3340/4885 |
| US-12572071-B2 | Carboxylate, carboxylic acid generator, resin, resist composition and method for producing resist pattern | MSR1, ARG1, H1-0 | CYP2D6 1702/4885CYP3A4 2141/4885LTA4H 712/4885 |
| US-12566375-B2 | Salt, acid generator, resist composition and method for producing resist pattern | HAO2, CLIC4, SLC11A2 | CYP2D6 1505/4885CYP3A4 2157/4885LTA4H 1779/4885 |
| US-20260029710-A1 | ACID GENERATING AGENT, SALT, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | CLIC1, RER1, MSR1 | CYP2D6 1716/4885CYP3A4 3001/4885LTA4H 4091/4885 |
| US-12572072-B2 | Salt, acid generator, resin, resist composition and method for producing resist pattern | MSR1, RER1, H1-0 | CYP2D6 1660/4885CYP3A4 2308/4885LTA4H 2218/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.