SCHEMBL525455

SCHEMBL525455

O=C(OCC12CC3CC(CC(O)(C3)C1)C2)C(F)(F)S(=O)(=O)[O-].c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
SCN9A Q15858 4/20 0.37
L3MBTL1 Q9Y468 1/20 0.34
PDK2 Q15119 4/20 0.33
ALDH1A1 P00352 2/20 0.33
LMNA P02545 1/20 0.33
DPP8 Q6V1X1 1/20 0.33
DPP9 Q86TI2 1/20 0.33
GAA P10253 1/20 0.32
P2RX7 Q99572 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30029494 1.00 SCN9A (0.37) SCN9AL3MBTL1PDK2ALDH1A1LMNA
SCHEMBL29721445 0.93 SCN9A (0.35) SCN9AL3MBTL1ALDH1A1
SCHEMBL30361501 0.93 SCN9A (0.34) SCN9AL3MBTL1
SCHEMBL547314 0.91 SCN9A (0.34) SCN9AALDH1A1LMNAGAAP2RX7
SCHEMBL242790 0.90 P2RX7 (0.36) SCN9AL3MBTL1ALDH1A1P2RX7
SCHEMBL16106772 0.86 SCN9A (0.38) SCN9AL3MBTL1ALDH1A1GAA
SCHEMBL21876327 0.86 SCN9A (0.38) SCN9AL3MBTL1ALDH1A1GAA
SCHEMBL21876326 0.86 SCN9A (0.38) SCN9AL3MBTL1ALDH1A1GAA
SCHEMBL1047516 0.86 L3MBTL1 (0.38) SCN9AL3MBTL1PDK2ALDH1A1LMNA
SCHEMBL2381748 0.85 MEN1 (0.43) ALDH1A1LMNAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114736120-B Preparation method and application of photoinitiator triphenylsulfonium salt for ArF photoresist 安徽秀朗新材料科技有限公司 2024-05-14 CN disclosed
CN-114736120-A Preparation method and application of photoinitiator triphenylsulfonium salt for ArF photoresist 安徽秀朗新材料科技有限公司 2022-07-12 CN disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-9482948-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-01 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-20160109800-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-04-21 US disclosed
EP-2390722-B1 Methods of forming photolithographic patterns ROHM & HAAS ELECT MAT (US) 2016-02-10 EP disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-9188864-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-11-17 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304293-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100230136-A1 METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-16 US disclosed
US-7794914-B2 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-14 US disclosed
US-20100203446-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-08-12 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20060194982-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-08-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 SCN9A 2737/4885L3MBTL1 1409/4885PDK2 4634/4885
US-20060194982-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same ASIC1, SLC9A1, NHERF1 SCN9A 39/4885L3MBTL1 4855/4885PDK2 4584/4885
US-20100304293-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME F12, H1-0, C1S SCN9A 1781/4885L3MBTL1 1220/4885PDK2 4475/4885
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CRY1, CHRM1, C1S SCN9A 2137/4885L3MBTL1 581/4885PDK2 3708/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.