SCHEMBL5414726

SCHEMBL5414726

CCc1ccc([I+](OS(=O)(=O)c2cc(Cl)c(Cl)cc2Cl)c2ccc(CC)cc2)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 2/20 0.35
THRB P10828 1/20 0.35
MAPT P10636 3/20 0.34
LMNA P02545 2/20 0.34
HPGD P15428 2/20 0.34
POLB P06746 2/20 0.34
ALDH1A1 P00352 2/20 0.34
XBP1 P17861 1/20 0.34
HTT P42858 1/20 0.34
CA2 P00918 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ALPL P05186 1/20 0.33
ALPI P09923 1/20 0.33
CTPS1 P17812 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
CA12 O43570 1/20 0.32
CA1 P00915 1/20 0.32
CA6 P23280 1/20 0.32
CA7 P43166 1/20 0.32
CA13 Q8N1Q1 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412226 0.89 CA2 (0.36) MAPTPOLBALDH1A1CA2SMN1; SMN2
SCHEMBL5403649 0.86 TP53 (0.41) TP53MAPTLMNAHPGDPOLB
SCHEMBL5400599 0.84 ALPL (0.38) POLBALDH1A1CA2SMN1; SMN2ALPL
SCHEMBL5404679 0.82 NPC1 (0.36) MAPTLMNAPOLBSMN1; SMN2ALPL
SCHEMBL5401558 0.81 HSD17B2 (0.41) ALDH1A1CA2ALPLALPIL3MBTL1
SCHEMBL5409969 0.81 TRPV4 (0.36) LMNAALDH1A1HTTSMN1; SMN2ALPL
SCHEMBL5400412 0.80 PGR (0.42) LMNAALDH1A1CA2SMN1; SMN2ALPL
SCHEMBL5408470 0.76 GAA (0.40) MAPTPOLBALDH1A1CA2L3MBTL1
SCHEMBL5406922 0.75 GAA (0.38) MAPTLMNAPOLBALDH1A1SMN1; SMN2
SCHEMBL5422314 0.74 KAT6A (0.38) TP53MAPTLMNAALDH1A1XBP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed