Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | AKR1C3 | P42330 | 1/20 | 0.39 |
| ▸ | EP300 | Q09472 | 1/20 | 0.38 |
| ▸ | KAT2A | Q92830 | 1/20 | 0.38 |
| ▸ | KAT2B | Q92831 | 1/20 | 0.38 |
| ▸ | PTGS1 | P23219 | 2/20 | 0.37 |
| ▸ | NQO2 | P16083 | 1/20 | 0.37 |
| ▸ | CYP1A1 | P04798 | 1/20 | 0.37 |
| ▸ | CYP1B1 | Q16678 | 1/20 | 0.37 |
| ▸ | MAOB | P27338 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.36 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.36 |
| ▸ | PTGS2 | P35354 | 2/20 | 0.36 |
| ▸ | CA2 | P00918 | 2/20 | 0.36 |
| ▸ | CA12 | O43570 | 1/20 | 0.36 |
| ▸ | CA9 | Q16790 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546201 | 0.90 | EP300 (0.45) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL546200 | 0.90 | EP300 (0.45) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL546915 | 0.85 | ALDH1A1 (0.49) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL963168 | 0.85 | ALDH1A1 (0.49) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL546375 | 0.84 | GAA (0.44) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL383221 | 0.84 | GAA (0.44) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL6743962 | 0.83 | CA12 (0.42) | EP300KAT2AKAT2BALDH1A1HSD11B1 | |
| SCHEMBL28626333 | 0.82 | ALDH1A1 (0.45) | EP300KAT2AKAT2BCYP1A1CYP1B1 | |
| SCHEMBL546415 | 0.82 | MAPT (0.47) | ALDH1A1GAAMAPTLMNAKDM4E | |
| SCHEMBL546681 | 0.81 | FAAH (0.41) | CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230176479-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-08 | — | — | US | disclosed |
| EP-4167028-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-19 | — | — | EP | disclosed |
| US-11460774-B2 | Photosensitive resin composition, photosensitive dry film, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-04 | — | — | US | disclosed |
| US-11256174-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| EP-3671345-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2022-02-02 | — | — | EP | disclosed |
| EP-3163374-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-02 | — | — | EP | disclosed |
| US-10815572-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-27 | — | — | US | disclosed |
| EP-2955576-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-07-22 | — | — | EP | disclosed |
| US-20200201182-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-25 | — | — | US | disclosed |
| EP-3671345-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-06-24 | — | — | EP | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | AKR1C3 4397/4885EP300 3198/4885KAT2A 2488/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | AKR1C3 2651/4885EP300 2134/4885KAT2A 355/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | AKR1C3 2856/4885EP300 2293/4885KAT2A 186/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | AKR1C3 358/4885EP300 3209/4885KAT2A 820/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.