SCHEMBL546604

SCHEMBL546604

CCCS(=O)(=O)O/N=C(/c1cccc2ccccc12)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CNR2 P34972 14/20 0.39
CNR1 P21554 12/20 0.39
CYP2C9 P11712 1/20 0.39
CDC25B P30305 1/20 0.38
KDM4E B2RXH2 1/20 0.35
HPGD P15428 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
NR4A1 P22736 1/20 0.35
NR4A2 P43354 1/20 0.35
NR4A3 Q92570 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL546605 1.00 CNR2 (0.39) CNR2CNR1CYP2C9CDC25BKDM4E
SCHEMBL30098756 1.00 CNR2 (0.39) CNR2CNR1CYP2C9CDC25BKDM4E
SCHEMBL546134 0.83 NR4A1 (0.39) CNR2CYP2C9CDC25BKDM4EHPGD
SCHEMBL546135 0.83 NR4A1 (0.39) CNR2CYP2C9CDC25BKDM4EHPGD
SCHEMBL17999242 0.80 ALDH1A1 (0.52) CNR2KDM4EHPGD
SCHEMBL547483 0.79 GABBR2 (0.40) KDM4EHPGDL3MBTL1
SCHEMBL547482 0.79 GABBR2 (0.40) KDM4EHPGDL3MBTL1
SCHEMBL17999246 0.78 KDM4E (0.48) CYP2C9KDM4EHPGD
SCHEMBL23154415 0.74 MAPT (0.31)
SCHEMBL17999248 0.74 CA12 (0.51) CNR2KDM4EHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
US-20230176479-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-08 US disclosed
EP-4167028-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-19 EP disclosed
US-11460774-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-04 US disclosed
EP-4050054-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2022-08-31 EP disclosed
US-11256174-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-02-22 US disclosed
EP-3671345-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2022-02-02 EP disclosed
EP-3163374-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-02 EP disclosed
EP-2955576-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-07-22 EP disclosed
EP-2101217-A1 Sulfonium salt-containing polymer, resist compositon, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-09-16 EP disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 CNR2 948/4885CNR1 1960/4885CYP2C9 650/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST CNR2 1749/4885CNR1 3589/4885CYP2C9 1127/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 CNR2 866/4885CNR1 403/4885CYP2C9 1088/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.