Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NR4A1 | P22736 | 1/20 | 0.39 |
| ▸ | NR4A2 | P43354 | 1/20 | 0.39 |
| ▸ | NR4A3 | Q92570 | 1/20 | 0.39 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.39 |
| ▸ | PLK1 | P53350 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 3/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.38 |
| ▸ | HPGD | P15428 | 3/20 | 0.38 |
| ▸ | GMNN | O75496 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | POLB | P06746 | 2/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.38 |
| ▸ | BLM | P54132 | 2/20 | 0.38 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.38 |
| ▸ | CMKLR1 | Q99788 | 2/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546135 | 1.00 | NR4A1 (0.39) | NR4A1NR4A2NR4A3PTPN1PLK1 | |
| SCHEMBL546604 | 0.83 | CNR2 (0.39) | NR4A1NR4A2NR4A3KDM4EHPGD | |
| SCHEMBL546605 | 0.83 | CNR2 (0.39) | NR4A1NR4A2NR4A3KDM4EHPGD | |
| SCHEMBL30098756 | 0.83 | CNR2 (0.39) | NR4A1NR4A2NR4A3KDM4EHPGD | |
| SCHEMBL547237 | 0.81 | RAB9A (0.36) | MAPTKMT2AHPGDALDH1A1POLB | |
| SCHEMBL30098722 | 0.81 | RAB9A (0.36) | MAPTKMT2AHPGDALDH1A1POLB | |
| SCHEMBL547238 | 0.81 | RAB9A (0.36) | MAPTKMT2AHPGDALDH1A1POLB | |
| SCHEMBL4901374 | 0.79 | NR4A1 (0.39) | NR4A1NR4A2NR4A3PLK1MEN1 | |
| SCHEMBL18429942 | 0.79 | KEAP1 (0.34) | MEN1KMT2AKDM4EALDH1A1LMNA | |
| SCHEMBL4905888 | 0.78 | NR4A1 (0.41) | NR4A1NR4A2NR4A3PLK1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 67 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| EP-4167028-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-19 | — | — | EP | disclosed |
| US-20220382157-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-12-01 | — | — | US | disclosed |
| US-11460774-B2 | Photosensitive resin composition, photosensitive dry film, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-04 | — | — | US | disclosed |
| US-11256174-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| EP-3671345-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2022-02-02 | — | — | EP | disclosed |
| EP-3163374-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-02 | — | — | EP | disclosed |
| EP-2955576-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-07-22 | — | — | EP | disclosed |
| US-20200201182-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-25 | — | — | US | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | NR4A1 952/4885NR4A2 1474/4885NR4A3 937/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | NR4A1 1829/4885NR4A2 2114/4885NR4A3 1404/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | NR4A1 179/4885NR4A2 715/4885NR4A3 237/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.