SCHEMBL5494

SCHEMBL5494

[CH2]OCC1CCCCCCC1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CTSL P07711 1/20 0.39
CTSB P07858 1/20 0.39
CTSK P43235 1/20 0.39
LMNA P02545 1/20 0.39
SLC1A3 P43003 3/20 0.35
SLC1A2 P43004 3/20 0.35
SLC1A1 P43005 3/20 0.35
CHRM5 P08912 2/20 0.35
CYP1A2 P05177 1/20 0.35
ADRA2C P18825 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM4 P08173 1/20 0.35
CHRM1 P11229 1/20 0.35
PARP15 Q460N3 2/20 0.33
PARP10 Q53GL7 2/20 0.33
SIGMAR1 Q99720 1/20 0.32
ADH1B P00325 1/20 0.32
ADH1C P00326 1/20 0.32
ADH1A P07327 1/20 0.32
ADH4 P08319 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12258 1.00
SCHEMBL5251 1.00 CTSL (0.39) CTSLCTSBCTSKLMNASLC1A3
SCHEMBL245776 0.97
SCHEMBL5243 0.91
SCHEMBL131877 0.84
SCHEMBL23039739 0.75 CTSL (0.41) CTSLCTSBCTSKLMNASLC1A3
SCHEMBL16239892 0.75 CTSL (0.41) CTSLCTSBCTSKLMNASLC1A3
SCHEMBL11682621 0.75 CTSL (0.41) CTSLCTSBCTSKLMNASLC1A3
SCHEMBL869115 0.75 CTSL (0.41) CTSLCTSBCTSKLMNASLC1A3
SCHEMBL379081 0.75 CTSL (0.41) CTSLCTSBCTSKLMNASLC1A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 195 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2955575-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYPHENOL DERIVATIVE USED IN SAME MITSUBISHI GAS CHEMICAL CO (JP) 2020-07-29 EP claimed
US-9897913-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-20 US claimed
US-20150030980-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2015-01-29 US claimed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
EP-4219477-A1 CYANOTRIAZOLE COMPOUNDS Otsuka Pharmaceutical Co., Ltd. (JP) 2023-08-02 EP disclosed
US-20230185191-A1 COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-06-15 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
CN-115605458-A Compound and method for producing same, acid generator, composition, resist film, underlayer film, pattern formation method, and optical article 学校法人关西大学(JP) 2023-01-13 CN disclosed
US-20220144738-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-05-12 US disclosed
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-22 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
US-20070059632-A1 Method of manufacturing a semiconductor device MITSUBISHI GAS CHEMICAL CO., INC. (JP) 2007-03-15 US disclosed
US-20060173050-A1 Inhibitors of c-Jun N-terminal kinases ABBVIE INC. 2006-08-03 US disclosed
EP-1666970-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2006-06-07 EP disclosed
US-20050171132-A1 Diaminopyrimidine derivatives as selective growth hormone secrectgogue receptor (GHS-R) antagonists XIN ZHILI (US) 2005-08-04 US disclosed
US-20050171131-A1 Diaminopyrimidine derivatives as growth hormone secrectgogue receptor (GHS-R) antagonists KOSOGOF CHRISTI (US) 2005-08-04 US disclosed
WO-2005030734-A1 DIAMINOPYRIMIDINE DERIVATIVES AS SELECTIVE GROWTH HORMONE SECRECTGOGUE RECEPTOR (GHS-R) ANTAGONISTS ABBOTT LABORATORIES (US) 2005-04-07 WO disclosed
US-20050070712-A1 Pyrimidine derivatives as ghrelin receptor modulators ABBOTT LABORATORIES 2005-03-31 US disclosed
US-20040191672-A1 Resist composition MITSUBISHI GAS CHEMICAL CO., LTD. (JP) 2004-09-30 US disclosed
EP-1443362-A2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-08-04 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060173050-A1 Inhibitors of c-Jun N-terminal kinases MAPKAPK3, MAP3K3, MAPK3 CTSL 3105/4885CTSB 1796/4885CTSK 859/4885
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 CTSL 1628/4885CTSB 3114/4885CTSK 2753/4885
US-20230185191-A1 COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT SOAT2, SOAT1, FAR1 CTSL 3984/4885CTSB 4359/4885CTSK 3981/4885
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it RDX, SLC11A2, FBL CTSL 4223/4885CTSB 3142/4885CTSK 3395/4885
US-20050171131-A1 Diaminopyrimidine derivatives as growth hormone secrectgogue receptor (GHS-R) antagonists GHSR, GIPR, GPR119 CTSL 3582/4885CTSB 3500/4885CTSK 4349/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R CTSL 4078/4885CTSB 3831/4885CTSK 3678/4885
US-20050171132-A1 Diaminopyrimidine derivatives as selective growth hormone secrectgogue receptor (GHS-R) antagonists GHSR, GIPR, GPR119 CTSL 3585/4885CTSB 3355/4885CTSK 4251/4885
US-20220144738-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN RER1, UNC119, FEM1B CTSL 4467/4885CTSB 3900/4885CTSK 3217/4885
US-20050070712-A1 Pyrimidine derivatives as ghrelin receptor modulators GPR119, GIPR, GCGR CTSL 2974/4885CTSB 2593/4885CTSK 3940/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R CTSL 4078/4885CTSB 3831/4885CTSK 3678/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.