Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL18941383 | 1.00 | — | — | |
| Water SCHEMBL2838856 | 1.00 | — | — | |
| Water SCHEMBL489954 | 1.00 | — | — | |
| Water SCHEMBL28992320 | 1.00 | — | — | |
| Water SCHEMBL1331926 | 1.00 | — | — | |
| Water SCHEMBL20582743 | 1.00 | — | — | |
| Water SCHEMBL28664843 | 1.00 | — | — | |
| Water SCHEMBL23327033 | 0.82 | — | — | |
| Water SCHEMBL21066928 | 0.82 | — | — | |
| Water SCHEMBL20573312 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116870872-B | Carbon dioxide gas adsorption separation membrane, application thereof and underground facility safety device | 山东建筑大学 | 2023-12-01 | — | — | CN | claimed |
| CN-116870872-A | Carbon dioxide gas adsorption separation membrane, application thereof and underground facility safety device | 山东建筑大学 | 2023-10-13 | — | — | CN | claimed |
| CN-1522313-A | Method for improving nucleation and adhesion of cvd and ald films deposited onto low-dielectric-constant dielectrics | ض� | 2004-08-18 | — | — | CN | claimed |
| EP-1432842-A2 | METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS | INTEL CORPORATION (US) | 2004-06-30 | — | — | EP | claimed |
| US-20030205823-A1 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | LEU JIHPERNG | 2003-11-06 | — | — | US | claimed |
| US-6605549-B2 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | INTEL CORPORATION | 2003-08-12 | — | — | US | claimed |
| WO-2003029514-A2 | METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS | INTEL CORPORATION (US) | 2003-04-10 | — | — | WO | claimed |
| US-20030064607-A1 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | INTEL CORPORATION | 2003-04-03 | — | — | US | claimed |
| WO-2025242515-A1 | A PHOTONIC SYSTEM AND METHOD FOR FREQUENCY CONVERSION OF LASER PUMPS | AARHUS UNIVERSITET (DK) | 2025-11-27 | — | — | WO | disclosed |
| CN-120202272-A | Pressure-sensitive adhesive sheet with release sheet | 日东电工株式会社 | 2025-06-24 | — | — | CN | disclosed |
| US-20250138386-A1 | AN OPTICAL SYSTEM FOR FREQUENCY CONVERSION OF A SINGLE PHOTON | AARHUS UNIVERSITET (DK) | 2025-05-01 | — | — | US | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| CN-119020733-A | Method for producing spindle target and plasma corrosion resistant layer and plasma resistant surface structure | 翔名科技股份有限公司 | 2024-11-26 | — | — | CN | disclosed |
| CN-221701622-U | Plasma resistant surface structure | 翔名科技股份有限公司 | 2024-09-13 | — | — | CN | disclosed |
| US-20100048029-A1 | Surface Preparation for Thin Film Growth by Enhanced Nucleation | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS | 2010-02-25 | — | — | US | disclosed |
| EP-1432842-A2 | METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS | INTEL CORPORATION (US) | 2004-06-30 | — | — | EP | disclosed |
| US-20030205823-A1 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | LEU JIHPERNG | 2003-11-06 | — | — | US | disclosed |
| US-6605549-B2 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | INTEL CORPORATION | 2003-08-12 | — | — | US | disclosed |
| WO-2003029514-A2 | METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS | INTEL CORPORATION (US) | 2003-04-10 | — | — | WO | disclosed |
| US-20030064607-A1 | Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics | INTEL CORPORATION | 2003-04-03 | — | — | US | disclosed |