SCHEMBL6140190

SCHEMBL6140190

CC(C)(C)Oc1ccc([S+](c2ccc(OCc3ccncc3)cc2)c2ccc(OC(C)(C)C)cc2)cc1.CC(C)(C)c1ccc(S(=O)(=O)[O-])cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 5/20 0.44
SMN1; SMN2 Q16637 5/20 0.44
HTT P42858 4/20 0.44
ALDH1A1 P00352 4/20 0.44
APP P05067 1/20 0.41
NR4A2 P43354 1/20 0.41
RXRA P19793 1/20 0.41
RXRB P28702 1/20 0.41
NPSR1 Q6W5P4 2/20 0.40
POLB P06746 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
NR2F2 P24468 1/20 0.39
RAB9A P51151 1/20 0.39
ADAMTS4 O75173 1/20 0.39
MMP13 P45452 1/20 0.39
MAPK14 Q16539 1/20 0.38
HSD11B1 P28845 2/20 0.37
RORC P51449 1/20 0.37
PTPRZ1 P23471 1/20 0.36
AR P10275 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140297 1.00 LMNA (0.44) LMNASMN1; SMN2HTTALDH1A1APP
SCHEMBL6140400 0.94 LMNA (0.47) LMNASMN1; SMN2HTTALDH1A1APP
SCHEMBL6140818 0.90 CA12 (0.42) LMNASMN1; SMN2HTTALDH1A1NR2F2
SCHEMBL6140238 0.90 RORC (0.44) LMNASMN1; SMN2HTTALDH1A1NR2F2
SCHEMBL6140394 0.90 RORC (0.44) LMNASMN1; SMN2HTTALDH1A1NR2F2
SCHEMBL6423707 0.85 F2 (0.40) SMN1; SMN2HTTAPPMAPK14MAOB
SCHEMBL6140607 0.83 ALDH1A1 (0.47) LMNASMN1; SMN2HTTALDH1A1NPSR1
SCHEMBL6140063 0.83 NOS3 (0.38) LMNAADAMTS4MMP13MAOB
SCHEMBL6140433 0.82 NOS3 (0.41) LMNASMN1; SMN2HTTRORCAR
SCHEMBL6140802 0.82 NOS3 (0.41) LMNASMN1; SMN2HTTRORCAR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed