SCHEMBL6140400

SCHEMBL6140400

CC(C)(C)c1ccc(S(=O)(=O)[O-])cc1.c1cc(COc2ccc([S+](c3ccc(OCc4ccncc4)cc3)c3ccc(OCc4ccncc4)cc3)cc2)ccn1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.47
HTT P42858 4/20 0.47
SMN1; SMN2 Q16637 4/20 0.47
APP P05067 1/20 0.46
ALDH1A1 P00352 3/20 0.45
NR4A2 P43354 1/20 0.45
RXRA P19793 1/20 0.45
RXRB P28702 1/20 0.45
NPSR1 Q6W5P4 2/20 0.44
POLB P06746 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
ADAMTS4 O75173 1/20 0.42
MMP13 P45452 1/20 0.42
MAPK14 Q16539 1/20 0.41
HSD11B1 P28845 3/20 0.40
NR2F2 P24468 1/20 0.40
RAB9A P51151 1/20 0.40
RORC P51449 1/20 0.40
PTPRZ1 P23471 1/20 0.40
AR P10275 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140297 0.94 LMNA (0.44) LMNAHTTSMN1; SMN2APPALDH1A1
SCHEMBL6140190 0.94 LMNA (0.44) LMNAHTTSMN1; SMN2APPALDH1A1
SCHEMBL6140104 0.86 RORC (0.49) LMNAHTTSMN1; SMN2ALDH1A1ADAMTS4
SCHEMBL6140119 0.85 LMNA (0.44) LMNAHTTSMN1; SMN2ALDH1A1RXRA
SCHEMBL6140394 0.84 RORC (0.44) LMNAHTTSMN1; SMN2ALDH1A1ADAMTS4
SCHEMBL6140818 0.84 CA12 (0.42) LMNAHTTSMN1; SMN2ALDH1A1ADAMTS4
SCHEMBL6140238 0.84 RORC (0.44) LMNAHTTSMN1; SMN2ALDH1A1ADAMTS4
SCHEMBL13439784 0.82 APP (0.65) LMNASMN1; SMN2APPNR4A2RXRA
SCHEMBL6140220 0.81 ALDH1A1 (0.52) LMNAHTTSMN1; SMN2ALDH1A1NPSR1
SCHEMBL8662142 0.80 RORC (0.46) LMNAHTTSMN1; SMN2APPADAMTS4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed