Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | VDR | P11473 | 1/20 | 0.47 |
| ▸ | HTT | P42858 | 1/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 4/20 | 0.45 |
| ▸ | BCHE | P06276 | 1/20 | 0.45 |
| ▸ | ACHE | P22303 | 1/20 | 0.45 |
| ▸ | CA12 | O43570 | 4/20 | 0.44 |
| ▸ | CA9 | Q16790 | 4/20 | 0.44 |
| ▸ | CA1 | P00915 | 2/20 | 0.44 |
| ▸ | CA2 | P00918 | 2/20 | 0.44 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.44 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.44 |
| ▸ | MEN1 | O00255 | 4/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.43 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL928195 | 0.92 | GAA (0.50) | VDRHTTSMN1; SMN2GAACA12 | |
| SCHEMBL5709681 | 0.91 | TDP1 (0.53) | VDRHTTSMN1; SMN2CA12CA2 | |
| SCHEMBL4446975 | 0.90 | HTR6 (0.44) | HTTSMN1; SMN2CA12CA9CA1 | |
| SCHEMBL3267933 | 0.88 | HTT (0.53) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL3839712 | 0.85 | VDR (0.47) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL2962485 | 0.83 | VDR (0.49) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL2964106 | 0.83 | VDR (0.49) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL3144536 | 0.83 | VDR (0.49) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL2955938 | 0.83 | VDR (0.49) | VDRHTTSMN1; SMN2GAABCHE | |
| SCHEMBL64190 | 0.83 | VDR (0.49) | VDRHTTSMN1; SMN2GAABCHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 792 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4664197-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-17 | — | — | EP | disclosed |
| US-12448485-B2 | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-10-21 | — | — | US | disclosed |
| US-20250298315-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-25 | — | — | US | disclosed |
| EP-4617775-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-17 | — | — | EP | disclosed |
| EP-4610254-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2025-09-03 | — | — | EP | disclosed |
| US-6048661-A | POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-04-11 | — | — | US | disclosed |
| US-6033828-A | POLYVINYLPHENOL DERIVATIVES | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-03-07 | — | — | US | disclosed |
| US-6027854-A | ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. | 2000-02-22 | — | — | US | disclosed |
| US-5972559-A | A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5942367-A | HIGH SENSITIVITY, RESOLUTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-08-24 | — | — | US | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| US-5876900-A | POLYHYDROXYSTYRENE POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-02 | — | — | US | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | VDR 4124/4885HTT 4860/4885SMN1; SMN2 3419/4885 |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | VDR 2564/4885HTT 3518/4885SMN1; SMN2 2208/4885 |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RPS21, CA11, RPL21 | VDR 2289/4885HTT 4300/4885SMN1; SMN2 564/4885 |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | PRDM9, ARCN1, PUF60 | VDR 230/4885HTT 3346/4885SMN1; SMN2 2618/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.