SCHEMBL64624

SCHEMBL64624

CCOC(C)OCCN(CCOC(C)OCC)CCOC(C)OCC

nearest known ligand 0.60

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.60
THRB P10828 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20718738 0.88 LMNA (0.46) LMNA
SCHEMBL5440519 0.83 LMNA (0.57) LMNATHRB
SCHEMBL14920988 0.82 MEN1 (0.41) LMNA
SCHEMBL3453066 0.81
SCHEMBL2928095 0.78 LMNA (0.32) LMNA
SCHEMBL9459 0.78
SCHEMBL2094168 0.78 LMNA (1.00) LMNATHRB
SCHEMBL4599059 0.77
SCHEMBL65109 0.77 PIK3CD (0.30)
SCHEMBL3504284 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1359 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260086457-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO LTD (JP) 2026-03-26 US disclosed
US-20260086458-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2026-03-26 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260079394-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO LTD (JP) 2026-03-19 US disclosed
US-20260079395-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO LTD (JP) 2026-03-19 US disclosed
US-12566376-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2026-03-03 US disclosed
US-20260050211-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF TOKYO OHKA KOGYO CO LTD (JP) 2026-02-19 US disclosed
US-20260003277-A1 NEGATIVE PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM TOKYO OHKA KOGYO CO LTD (JP) 2026-01-01 US disclosed
US-20260003282-A1 PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM TOKYO OHKA KOGYO CO LTD (JP) 2026-01-01 US disclosed
US-20250390017-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATION AGENT TOKYO OHKA KOGYO CO LTD (JP) 2025-12-25 US disclosed
US-6117621-A APPLYING A CHEMICALLY AMPLIFIED POSITIVE RESIST OF A POLYMER WITH ACID LABILE GROUPS, A PHOTOACID GENERATOR AND A ORGANIC SOLVENT; RESOLUTION AND FOCAL DEPTH; EXPOSING, BAKING, AND DEVELOPING; CALIBRATION OF EXPOSURES AND DISSOLUTION RATES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-12 US disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed
US-6066433-A SILICONE POLYMER CONTAINING PHENOLIC HYDROXYL GROUPS HAVING HYDROGEN ATOMS OF SOME PHENOLIC HYDROXYL GROUPS REPLACED BY ACID LABILE GROUPS, CROSSLINKED AT SOME OF THE REMAINING PHENOLIC HYDROXYL GROUPS WITH GROUPS HAVING ETHER LINKAGES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-23 US disclosed
US-6048661-A POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-04-11 US disclosed
US-6033828-A POLYVINYLPHENOL DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-03-07 US disclosed
US-6027854-A ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. 2000-02-22 US disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250390017-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATION AGENT IGF1R, SLC11A2, ITGB1 LMNA 498/4885THRB 136/4885
US-20260086458-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER COMPOUND RER1, ITGA1, AR LMNA 1206/4885THRB 412/4885
US-20260086457-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD CCND2, CCNA1, CCND1 LMNA 370/4885THRB 2596/4885
US-20260003282-A1 PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM H1-4, H1-10, H1-0 LMNA 356/4885THRB 554/4885
US-20260003277-A1 NEGATIVE PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM H1-4, H1-10, H1-0 LMNA 320/4885THRB 340/4885
US-20260079395-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT F9, AFF2, AFF1 LMNA 1829/4885THRB 932/4885
US-20260050211-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF RARG, RXRG, IGF1R LMNA 209/4885THRB 221/4885
US-12566376-B2 Resist composition and resist pattern forming method RER1, REV1, GAR1 LMNA 1466/4885THRB 400/4885
US-20260079394-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND AND ACID DIFFUSION CONTROL AGENT DRD1, DRD2, FANCD2 LMNA 1237/4885THRB 3264/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 LMNA 2609/4885THRB 1669/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.