SCHEMBL646648

SCHEMBL646648

CCO[Si](OCC)(OCC)[Si](OCC)(OCC)OCC

nearest known ligand 0.30

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2283452 0.86
SCHEMBL3658214 0.86
SCHEMBL4612833 0.83
SCHEMBL249445 0.81
SCHEMBL20703833 0.81
SCHEMBL4326495 0.81
SCHEMBL1271789 0.81
SCHEMBL7195428 0.78 LMNA (0.30)
SCHEMBL6617973 0.78
SCHEMBL4614871 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 488 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119505361-A Preparation method of fluorine-free waterproof breathable film based on irradiation technology 天津工业大学绍兴柯桥研究院 2025-02-25 CN claimed
CN-106750448-B Painted article coated with a paint composition for glazing polycarbonate 现代自动车株式会社 2021-11-16 CN claimed
US-20170145246-A1 PAINTED ARTICLE COATED WITH COATING PAINT COMPOSITION FOR POLYCARBONATE GLAZING NOROO PAINT & COATINGS., LTD. (KR) 2017-05-25 US claimed
US-8455605-B2 Resin composition for transparent encapsulation material and electronic device formed using the same CHEIL INDUSTRIES, INC. (KR) 2013-06-04 US claimed
US-8298965-B2 Volatile precursors for deposition of C-linked SiCOH dielectrics AMERICAN AIR LIQUIDE, INC. (US) 2012-10-30 US claimed
US-20120270998-A1 RESIN COMPOSITION FOR TRANSPARENT ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE FORMED USING THE SAME CHEIL INDUSTRIES, INC. (KR) 2012-10-25 US claimed
US-8026035-B2 Organosilicon polymer containing chromogen; antireflactivity coating for lithography CHEIL INDUSTRIES, INC. (KR) 2011-09-27 US claimed
US-7999355-B2 Aminosilanes for shallow trench isolation films AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-08-16 US claimed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US claimed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US claimed
US-20100052115-A1 Volatile Precursors for Deposition of C-Linked SiCOH Dielectrics AMERICAN AIR LIQUIDE, INC. (US) 2010-03-04 US claimed
US-20100009546-A1 Aminosilanes for Shallow Trench Isolation Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-01-14 US claimed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP claimed
US-7488693-B2 Method for producing silicon oxide film TOAGOSEI CO., LTD. (JP) 2009-02-10 US claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
US-20080241748-A1 Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same CHEIL INDUSTRIES, INC. (KR) 2008-10-02 US claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed
US-4515901-A MIXING WITH PILLARING AGENT, DRYING, ROASTING TEXACO INC. (US) 1985-05-07 US claimed
US-4137391-A Continuous solution polymerization of a conjugated diene with a monovinylaromatic compound using alkoxysilicon treating agents in the first reactor means of a reactor series PHILLIPS PETROLEUM COMPANY (US) 1979-01-30 US claimed
CN-113921459-B Semiconductor element and method for manufacturing the same 南亚科技股份有限公司 2026-05-15 CN disclosed
CN-114388433-B Semiconductor device and method for manufacturing the same 南亚科技股份有限公司 2026-05-15 CN disclosed
US-12575404-B2 Semiconductor device with protection layer and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2026-03-10 US disclosed
US-20260040913-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
US-20260040912-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
CN-121063542-A Si by-product of polysilicon2OCl6Prepared flexible SiO2Aerogel and method and application 石河子大学 2025-12-05 CN disclosed
EP-4479479-B1 SILPHENYLENE POLYMERS WACKER CHEMIE AG (DE) 2025-08-13 EP disclosed
US-20250215260-A1 SILPHENYLENE POLYMERS WACKER CHEMIE AG (DE) 2025-07-03 US disclosed
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
CN-119505361-A Preparation method of fluorine-free waterproof breathable film based on irradiation technology 天津工业大学绍兴柯桥研究院 2025-02-25 CN disclosed
CN-119446903-A Semiconductor element with protective layer and preparation method thereof 南亚科技股份有限公司 2025-02-14 CN disclosed
CN-119446904-A Semiconductor element with protective layer and preparation method thereof 南亚科技股份有限公司 2025-02-14 CN disclosed
US-20250046709-A1 SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2025-02-06 US disclosed
US-20250046708-A1 SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2025-02-06 US disclosed
WO-2025028268-A1 ETCHING LIQUID REGENERATION METHOD ラサ工業株式会社 2025-02-06 WO disclosed
CN-119256051-A Silicon phenylene Polymer 瓦克化学股份公司 2025-01-03 CN disclosed
EP-4479479-A1 SILPHENYLENE POLYMERS Wacker Chemie AG (DE) 2024-12-25 EP disclosed
US-12160988-B2 Semiconductor device with composite word line structure and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2024-12-03 US disclosed
CN-110168008-B Rubber composition for tire tread and pneumatic tire 横滨橡胶株式会社 2024-11-26 CN disclosed
US-20240365537-A1 SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2024-10-31 US disclosed
WO-2024122103-A1 ETCHING SOLUTION COMPOSITION ラサ工業株式会社 2024-06-13 WO disclosed
WO-2024080172-A1 MODIFIED GROUP-CONTAINING HYDROGENATED BLOCK COPOLYMER AND METHOD FOR PRODUCING MODIFIED GROUP-CONTAINING HYDROGENATED BLOCK COPOLYMER 日本ゼオン株式会社 2024-04-18 WO disclosed
US-20240030062-A1 INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION LAM RESEARCH CORPORATION 2024-01-25 US disclosed
US-11851554-B2 Rubber composition for a vehicle part HYUNDAI MOTOR COMPANY (KR) 2023-12-26 US disclosed
CN-117121173-A Integration of fully aligned vias by selective deposition and resistivity reduction 朗姆研究公司 2023-11-24 CN disclosed
WO-2023222203-A1 SILPHENYLENE POLYMERS WACKER CHEMIE AG (DE) 2023-11-23 WO disclosed
EP-3419982-B1 NEW STABLE SILYLATING REAGENTS CALIFORNIA INST OF TECHN (US) 2023-11-15 EP disclosed
US-20230328970-A1 SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2023-10-12 US disclosed
US-20230212344-A1 THERMOPLASTIC ELASTOMER COMPOSITION FOR IMPACT-RESISTANT MATERIAL AND IMPACT-RESISTANT MATERIAL ZEON CORPORATION (JP) 2023-07-06 US disclosed
US-11683928-B2 Semiconductor device with single step height NANYA TECHNOLOGY CORPORATION (TW) 2023-06-20 US disclosed
US-11631735-B2 Semiconductor device with flowable layer NANYA TECHNOLOGY CORPORATION (TW) 2023-04-18 US disclosed
US-20230074171-A1 RUBBER COMPOSITION FOR A VEHICLE PART HYUNDAI MOTOR COMPANY (KR) 2023-03-09 US disclosed
EP-4112654-A1 THERMOPLASTIC ELASTOMER COMPOSITION FOR IMPACT-RESISTANT MATERIAL AND IMPACT-RESISTANT MATERIAL Zeon Corporation (JP) 2023-01-04 EP disclosed
US-11502165-B2 Semiconductor device with flowable layer and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2022-11-15 US disclosed
US-11492452-B2 Multi-block copolymer composition obtained by modification treatment, and film ZEON CORPORATION (JP) 2022-11-08 US disclosed
WO-2022221881-A1 INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION LAM RESEARCH CORPORATION (US) 2022-10-20 WO disclosed
US-11459417-B2 Block copolymer composition including ionic group, and film ZEON CORPORATION (JP) 2022-10-04 US disclosed
US-20220252985-A1 COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-08-11 US disclosed
US-11359075-B2 Rubber composition for a tire tread and pneumatic tire using the same THE YOKOHAMA RUBBER CO., LTD. (JP) 2022-06-14 US disclosed
US-20220181438-A1 SEMICONDUCTOR DEVICE WITH FLOWABLE LAYER NANYA TECHNOLOGY CORPORATION (TW) 2022-06-09 US disclosed
EP-3569651-B1 RUBBER COMPOSITION FOR TIRE TREADS AND PNEUMATIC TIRE YOKOHAMA RUBBER CO LTD (JP) 2022-04-27 EP disclosed
CN-114388433-A Semiconductor device and method for manufacturing the same 南亚科技股份有限公司 2022-04-22 CN disclosed
US-20220122991-A1 SEMICONDUCTOR DEVICE WITH SINGLE STEP HEIGHT AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2022-04-21 US disclosed
US-20220122992-A1 SEMICONDUCTOR DEVICE WITH SINGLE STEP HEIGHT NANYA TECHNOLOGY CORPORATION (TW) 2022-04-21 US disclosed
US-11309316-B1 Semiconductor device with single step height and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2022-04-19 US disclosed
CN-114149462-A Preparation method of phenyl alkoxy silane 湖北兴瑞硅材料有限公司 2022-03-08 CN disclosed
US-11264474-B1 Semiconductor device with boron nitride layer and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2022-03-01 US disclosed
US-20220059666-A1 SEMICONDUCTOR DEVICE WITH BORON NITRIDE LAYER AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2022-02-24 US disclosed
CN-113929713-A Method for preparing alkoxy disilane by using organic silicon byproduct high-boiling residues 湖北兴瑞硅材料有限公司 2022-01-14 CN disclosed
US-20220013629-A1 SEMICONDUCTOR DEVICE WITH FLOWABLE LAYER AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2022-01-13 US disclosed
CN-113666955-A Novel stable silylating agents 加州理工学院 2021-11-19 CN disclosed
CN-106750448-B Painted article coated with a paint composition for glazing polycarbonate 现代自动车株式会社 2021-11-16 CN disclosed
US-20210323983-A1 STABLE SILYLATING REAGENTS CALIFORNIA INSTITUTE OF TECHNOLOGY 2021-10-21 US disclosed
US-20210230336-A1 BLOCK COPOLYMER COMPOSITION INCLUDING IONIC GROUP, AND FILM ZEON CORPORATION (JP) 2021-07-29 US disclosed
US-11059994-B2 Silicone resin, related methods, and film formed therewith DOW SILICONES CORPORATION (US) 2021-07-13 US disclosed
US-11028107-B2 Stable silylating reagents CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 2021-06-08 US disclosed
WO-2021106537-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-06-03 WO disclosed
US-20200255607-A1 MULTI-BLOCK COPOLYMER COMPOSITION OBTAINED BY MODIFICATION TREATMENT, AND FILM ZEON CORPORATION (JP) 2020-08-13 US disclosed
US-20200248031-A1 SILICONE RESIN, RELATED METHODS, AND FILM FORMED THEREWITH DOW SILICONES CORPORATION 2020-08-06 US disclosed
EP-3677645-A1 MULTI-BLOCK COPOLYMER COMPOSITION OBTAINED BY MODIFICATION TREATMENT, AND FILM Zeon Corporation (JP) 2020-07-08 EP disclosed
US-20200123346-A1 Rubber Composition for a Tire Tread and Pneumatic Tire Using the Same THE YOKOHAMA RUBBER CO., LTD. (JP) 2020-04-23 US disclosed
EP-3569651-A1 RUBBER COMPOSITION FOR TIRE TREADS AND PNEUMATIC TIRE The Yokohama Rubber Co., Ltd. (JP) 2019-11-20 EP disclosed
WO-2019216241-A1 BLOCK COPOLYMER COMPOSITION HAVING IONIC GROUP AND FILM 日本ゼオン株式会社 (JP) 2019-11-14 WO disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
WO-2019027908-A1 SILICONE RESIN, RELATED METHODS, AND FILM FORMED THEREWITH DOW SILICONES CORPORATION (US) 2019-02-07 WO disclosed
EP-3419982-A1 NEW STABLE SILYLATING REAGENTS California Institute of Technology (US) 2019-01-02 EP disclosed
US-10170297-B2 Compositions and methods using same for flowable oxide deposition VERSUM MATERIALS US, LLC (US) 2019-01-01 US disclosed
CN-104884552-B The curable coating composition of one pack system, its preparation and application and coating prepared therefrom and product 巴斯夫涂料有限公司 2018-09-14 CN disclosed
US-10072138-B2 Rubber composition for use in tire treads THE YOKOHAMA RUBBER CO., LTD (JP) 2018-09-11 US disclosed
US-20180208839-A1 COLOR CONVERSION FILMS COMPRISING A RHODAMINE-BASED FLUORESCENT (RBF) COMPOUND AND PLASMON ENHANCED FLUORESCENT DYES StoreDot Ltd. (IL) 2018-07-26 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-9994765-B2 2018-06-12 US disclosed
US-20180105696-A1 COLOR CONVERSION WITH SOLID MATRIX FILMS AND GREEN RHODAMINES StoreDot Ltd. (IL) 2018-04-19 US disclosed
US-20180072892-A1 MODIFICATIONS OF THE SOL-GEL AND PROCESS THEREOF StoreDot Ltd. (IL) 2018-03-15 US disclosed
US-20180051174-A1 COLOR CONVERSION IN LCD DISPLAYS WITH SILICA NANOPARTICLES MOLECULED LTD. (IL) 2018-02-22 US disclosed
US-20180039131-A1 CONTROL OF ILLUMINATION SPECTRA FOR LCD DISPLAYS StoreDot Ltd. (IL) 2018-02-08 US disclosed
US-20180037738-A1 COLOR CONVERSION WITH SOLID MATRIX FILMS StoreDot Ltd. (IL) 2018-02-08 US disclosed
US-9868859-B2 Color conversion in LCD displays StoreDot Ltd. (IL) 2018-01-16 US disclosed
US-9847222-B2 Treatment for flowable dielectric deposition on substrate surfaces LAM RESEARCH CORPORATION (US) 2017-12-19 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
WO-2017147110-A1 NEW STABLE SILYLATING REAGENTS CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 2017-08-31 WO disclosed
US-20170240571-A1 STABLE SILYLATING REAGENTS CALIFORNIA INSTITUTE OF TECHNOLOGY 2017-08-24 US disclosed
US-9719169-B2 System and apparatus for flowable deposition in semiconductor fabrication NOVELLUS SYSTEMS, INC. (US) 2017-08-01 US disclosed
US-20170145246-A1 PAINTED ARTICLE COATED WITH COATING PAINT COMPOSITION FOR POLYCARBONATE GLAZING NOROO PAINT & COATINGS., LTD. (KR) 2017-05-25 US disclosed
US-20170137628-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137630-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137630-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139270-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137628-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139270-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137705-A1 COLOR CONVERSION FILMS WITH PLASMON ENHANCED FLUORESCENT DYES MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137627-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139277-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137627-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139271-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139271-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170139277-A1 COLOR CONVERSION IN LCD DISPLAYS MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-20170137705-A1 COLOR CONVERSION FILMS WITH PLASMON ENHANCED FLUORESCENT DYES MOLECULED LTD. (IL) 2017-05-18 US disclosed
US-9567451-B2 Rubber composition for use in tire treads THE YOKOHAMA RUBBER CO., LTD. (JP) 2017-02-14 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
US-9493638-B2 Rubber composition for tire THE YOKOHAMA RUBBER CO., LTD. (JP) 2016-11-15 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9475924-B2 Rubber composition for tire tread and pneumatic tire using the same THE YOKOHAMA RUBBER CO., LTD. (JP) 2016-10-25 US disclosed
EP-2001965-B1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC TECHNOLOGIES INC (US) 2016-10-05 EP disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9416252-B2 Rubber composition for tire tread THE YOKOHAMA RUBBER CO., LTD. (JP) 2016-08-16 US disclosed
US-9337054-B2 Precursors for silicon dioxide gap fill ENTEGRIS, INC. (US) 2016-05-10 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9299559-B2 Flowable oxide film with tunable wet etch rate NOVELLUS SYSTEMS, INC. (US) 2016-03-29 US disclosed
US-20160056071-A1 FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING LAM RESEARCH CORPORATION 2016-02-25 US disclosed
US-9245739-B2 Low-K oxide deposition by hydrolysis and condensation LAM RESEARCH CORPORATION (US) 2016-01-26 US disclosed
US-9233840-B2 Method for improving self-assembled polymer features INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-01-12 US disclosed
EP-1391476-B1 PHOTOREACTIVE COMPOSITION SEKISUI CHEMICAL CO LTD (JP) 2015-12-09 EP disclosed
EP-2657257-B1 CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, RUBBER CROSSLINKED PRODUCT, AND TIRE ZEON CORP (JP) 2015-10-14 EP disclosed
US-9139721-B2 Rubber composition for tire treads THE YOKOHAMA RUBBER CO., LTD. (JP) 2015-09-22 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-9116427-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-08-25 US disclosed
US-20150160556-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-06-11 US disclosed
US-9034292-B2 Method and apparatus for producing disilane through pyrolysis of monosilane OCI MATERIALS CO., LTD. (KR) 2015-05-19 US disclosed
US-20150126643-A1 Rubber Composition for Tire THE YOKOHAMA RUBBER CO., LTD. (JP) 2015-05-07 US disclosed
US-20150118863-A1 METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING LOW POROSITY LAM RESEARCH CORPORATION 2015-04-30 US disclosed
US-20150118862-A1 TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES LAM RESEARCH CORPORATION 2015-04-30 US disclosed
US-8993223-B2 Resist pattern-forming method JSR CORPORATION (JP) 2015-03-31 US disclosed
US-20150078980-A1 METHOD AND APPARATUS FOR PRODUCING DISILANE THROUGH PYROLYSIS OF MONOSILANE OCI MATERIALS CO., LTD. 2015-03-19 US disclosed
US-20150056822-A1 COMPOSITIONS AND METHODS USING SAME FOR FLOWABLE OXIDE DEPOSITION AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-02-26 US disclosed
US-20150054192-A1 Method for Producing Rubber-Like Polymer ASAHI KASEI CHEMICALS CORPORATION (JP) 2015-02-26 US disclosed
EP-2840164-A1 Compositions and methods using same for flowable oxide deposition AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-02-25 EP disclosed
US-8962747-B2 Resist underlayer composition and process of producing integrated circuit devices using the same CHEIL INDUSTRIES, INC. (KR) 2015-02-24 US disclosed
US-20150050600-A9 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-02-19 US disclosed
US-20150048046-A1 METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION JSR CORPORATION (JP) 2015-02-19 US disclosed
US-8956807-B2 Method for forming resist pattern, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-02-17 US disclosed
US-20150044882-A1 FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE NOVELLUS SYSTEMS INC (US) 2015-02-12 US disclosed
EP-2832752-A1 METHOD FOR MANUFACTURING RUBBER-LIKE POLYMER Asahi Kasei Chemicals Corporation (JP) 2015-02-04 EP disclosed
US-20150031791-A1 Rubber Composition for Tire Treads THE YOKOHAMA RUBBER CO., LTD. (JP) 2015-01-29 US disclosed
US-8937130-B2 Conjugated diene rubber, rubber composition, cross-linked rubber, and tire ZEON CORPORATION (JP) 2015-01-20 US disclosed
US-8927201-B2 Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition JSR CORPORATION (JP) 2015-01-06 US disclosed
US-20150004806-A1 LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION LAM RESEARCH CORPORATION 2015-01-01 US disclosed
US-20140302689-A1 METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION NOVELLUS SYSTEMS, INC. (US) 2014-10-09 US disclosed
US-8846536-B2 Flowable oxide film with tunable wet etch rate NOVELLUS SYSTEMS, INC. (US) 2014-09-30 US disclosed
US-8841218-B2 Resist underlayer composition and process of producing integrated circuit devices using same CHEIL INDUSTRIES, INC. (KR) 2014-09-23 US disclosed
US-8734904-B2 Methods of forming topographical features using segregating polymer mixtures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-27 US disclosed
US-8728958-B2 Gap fill integration NOVELLUS SYSTEMS, INC. (US) 2014-05-20 US disclosed
US-20140134544-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-05-15 US disclosed
US-8703395-B2 Pattern-forming method JSR CORPORATION (JP) 2014-04-22 US disclosed
US-8669042-B2 Resist pattern-forming method JSR CORPORATION (JP) 2014-03-11 US disclosed
US-20140030660-A1 MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2014-01-30 US disclosed
US-20130338255-A1 RUBBER COMPOSITION FOR TIRE TREAD THE YOKOHAMA RUBBER CO., LTD. (JP) 2013-12-19 US disclosed
EP-2272878-B1 Coupled polymers and manufacturing method thereof TSRC CORP (TW) 2013-12-18 EP disclosed
US-20130324638-A1 RUBBER COMPOSITION FOR USE IN TIRE TREADS THE YOKOHAMA RUBBER CO., LTD. (JP) 2013-12-05 US disclosed
EP-2657257-A1 CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, RUBBER CROSSLINK PRODUCT, AND TIRE Zeon Corporation (JP) 2013-10-30 EP disclosed
US-20130267646-A1 RUBBER COMPOSITION FOR TIRE TREAD AND PNEUMATIC TIRE USING THE SAME THE YOKOHAMA RUBBER CO., LTD. (JP) 2013-10-10 US disclosed
US-20130267649-A1 CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, CROSS-LINKED RUBBER, AND TIRE ZEON CORPORATION (JP) 2013-10-10 US disclosed
US-8536242-B2 Photocurable composition SEKISUI CHEMICAL CO., LTD. (JP) 2013-09-17 US disclosed
US-20130233825-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-09-12 US disclosed
US-20130230987-A1 FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE NOVELLUS SYSTEMS, INC. 2013-09-05 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
CN-101528974-B Method for deposition of dielectric layer in clearance formed on a substrate and filling the clearance using the dielectric material APPLIED MATERIALS INC 2013-07-17 CN disclosed
US-8481649-B2 Coupled polymers and manufacturing method thereof TSRC CORPORATION (TW) 2013-07-09 US disclosed
EP-1746122-B1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2013-06-12 EP disclosed
US-8455605-B2 Resin composition for transparent encapsulation material and electronic device formed using the same CHEIL INDUSTRIES, INC. (KR) 2013-06-04 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-8404786-B2 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same JSR CORPORATION (JP) 2013-03-26 US disclosed
EP-1705208-B1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME JSR CORP (JP) 2013-03-20 EP disclosed
US-20130037921-A1 RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING SAME CHEIL INDUSTRIES, INC. (KR) 2013-02-14 US disclosed
EP-2003146-B1 USE OF A CONJUGATED DIENE RUBBER FOR A TIRE ZEON CORP (JP) 2012-12-26 EP disclosed
US-8298965-B2 Volatile precursors for deposition of C-linked SiCOH dielectrics AMERICAN AIR LIQUIDE, INC. (US) 2012-10-30 US disclosed
US-20120270981-A1 RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME CHEIL INDUSTRIES, INC. (KR) 2012-10-25 US disclosed
US-20120270998-A1 RESIN COMPOSITION FOR TRANSPARENT ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE FORMED USING THE SAME CHEIL INDUSTRIES, INC. (KR) 2012-10-25 US disclosed
EP-1705207-B1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR CORP (JP) 2012-10-24 EP disclosed
EP-2503022-A1 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for HARP II - remote plasma enhanced deposition processes Applied Materials, Inc. (US) 2012-09-26 EP disclosed
US-8268403-B2 Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength JSR CORPORATION (JP) 2012-09-18 US disclosed
US-20120231575-A1 METHOD FOR PRODUCING SOLAR CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-09-13 US disclosed
US-8263316-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-09-11 US disclosed
EP-2495771-A1 SOLAR CELL Hitachi Chemical Company, Ltd. (JP) 2012-09-05 EP disclosed
EP-2495770-A1 METHOD FOR PRODUCING SOLAR CELL Hitachi Chemical Company, Ltd. (JP) 2012-09-05 EP disclosed
US-20120211076-A1 SOLAR CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-08-23 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20120161405-A1 SYSTEM AND APPARATUS FOR FLOWABLE DEPOSITION IN SEMICONDUCTOR FABRICATION NOVELLUS SYSTEMS, INC. 2012-06-28 US disclosed
US-20120149213-A1 BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES NOVELLUS SYSTEMS, INC. 2012-06-14 US disclosed
US-20120135146-A1 METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES JSR CORPORATION (JP) 2012-05-31 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-8173348-B2 Method of forming pattern and composition for forming of organic thin-film for use therein JSR CORPORATION (JP) 2012-05-08 US disclosed
US-20120103935-A1 METHOD FOR IMPROVING SELF-ASSEMBLED POLYMER FEATURES JSR CORPORATION (JP) 2012-05-03 US disclosed
US-8158191-B2 Coating compositions, articles, and methods of coating articles SDC COATINGS, INC. (US) 2012-04-17 US disclosed
US-8158301-B2 Polyelectrolyte membranes and methods for making GENERAL ELECTRIC COMPANY (US) 2012-04-17 US disclosed
US-8158981-B2 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-04-17 US disclosed
US-8153348-B2 Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch APPLIED MATERIALS, INC. (US) 2012-04-10 US disclosed
US-8153348-B2 Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch APPLIED MATERIALS, INC. (US) 2012-04-10 US disclosed
US-8153197-B2 Coating compositions, articles, and methods of coating articles SDC TECHNOLOGIES, INC. (US) 2012-04-10 US disclosed
US-8153196-B2 Coating compositions, articles, and methods of coating articles SDC TECHNOLOGIES, INC. (US) 2012-04-10 US disclosed
US-20120049401-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC TECHNOLOGIES, INC. (US) 2012-03-01 US disclosed
US-8119324-B2 Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film JSR CORPORATION (JP) 2012-02-21 US disclosed
US-8034545-B2 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2011-10-11 US disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 EP disclosed
US-8026035-B2 Organosilicon polymer containing chromogen; antireflactivity coating for lithography CHEIL INDUSTRIES, INC. (KR) 2011-09-27 US disclosed
US-7999355-B2 Aminosilanes for shallow trench isolation films AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-08-16 US disclosed
US-7972656-B2 Coating compositions, articles, and methods of coating articles SDC TECHNOLOGIES, INC. (US) 2011-07-05 US disclosed
US-20110151678-A1 NOVEL GAP FILL INTEGRATION NOVELLUS SYSTEMS, INC. 2011-06-23 US disclosed
EP-1981074-B1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2011-06-22 EP disclosed
WO-2011072143-A2 NOVEL GAP FILL INTEGRATION NOVELLUS SYSTEMS, INC. (US) 2011-06-16 WO disclosed
US-7943531-B2 Methods for forming a silicon oxide layer over a substrate APPLIED MATERIALS, INC. (US) 2011-05-17 US disclosed
US-7943531-B2 Methods for forming a silicon oxide layer over a substrate APPLIED MATERIALS, INC. (US) 2011-05-17 US disclosed
US-20110097669-A1 PHOTOCURABLE COMPOSITION SEKISUI CHEMICAL CO., LTD. (JP) 2011-04-28 US disclosed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US disclosed
US-20110077364-A1 COMPOSITION CONTAINING SILICON-CONTAINING POLYMER, CURED PRODUCT OF THE COMPOSITION, SILICON-CONTAINING POLYMER, AND METHOD OF PRODUCING THE SILICON-CONTAINING POLYMER JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20110042789-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM JSR CORPORATION (JP) 2011-02-24 US disclosed
US-7893538-B2 Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device JSR CORPORATION (JP) 2011-02-22 US disclosed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US disclosed
US-20110009588-A1 COUPLED POLYMERS AND MANUFACTURING METHOD THEREOF TSRC CORPORATION (TW) 2011-01-13 US disclosed
EP-2272878-A1 Coupled polymers and manufacturing method thereof TSRC Corporation (TW) 2011-01-12 EP disclosed
EP-2264219-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF JSR Corporation (JP) 2010-12-22 EP disclosed
US-20100310876-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC TECHNOLOGIES, INC. (US) 2010-12-09 US disclosed
US-7825040-B1 Method for depositing flowable material using alkoxysilane or aminosilane precursor ASM JAPAN K.K. (JP) 2010-11-02 US disclosed
EP-1296365-B1 Method of film formation JSR CORP (JP) 2010-09-22 EP disclosed
US-20100233635-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN JSR CORPORATION (JP) 2010-09-16 US disclosed
EP-2042531-B1 BLOCK COPOLYMER, COMPOSITION FOR RESIN MODIFICATION, AND MODIFIED RESIN COMPOSITION ZEON CORP (JP) 2010-09-01 EP disclosed
EP-2208222-A1 METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE Applied Materials, Inc. (US) 2010-07-21 EP disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed
US-20100164057-A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2010-07-01 US disclosed
US-20100168327-A1 POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME JSR CORPORATION (JP) 2010-07-01 US disclosed
US-20100167024-A1 NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN JSR CORPORATION (JP) 2010-07-01 US disclosed
US-7736748-B2 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same JSR CORPORATION (JP) 2010-06-15 US disclosed
US-20100119736-A1 AMBIENT PRESSURE SYNTHESIS OF ZEOLITE FILMS AND THEIR APPLICATION AS CORROSION RESISTANT COATINGS THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2010-05-13 US disclosed
US-20100102321-A1 RADIATION-SENSITIVE COMPOSITION, METHOD OF FORMING SILICA-BASED COATING FILM, SILICA-BASED COATING FILM, APPARATUS AND MEMBER HAVING SILICA-BASED COATING FILM AND PHOTOSENSITIZING AGENT FOR INSULATING FILM HITACHI CHEMICAL COMPANY, LTD. (JP) 2010-04-29 US disclosed
US-20100052115-A1 Volatile Precursors for Deposition of C-Linked SiCOH Dielectrics AMERICAN AIR LIQUIDE, INC. (US) 2010-03-04 US disclosed
US-20100007025-A1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2010-01-14 US disclosed
US-20100009546-A1 Aminosilanes for Shallow Trench Isolation Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-01-14 US disclosed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP disclosed
US-20090311622-A1 METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING UNDER-LAYER FILM JSR CORPORATION (JP) 2009-12-17 US disclosed
US-20090297911-A1 POLYELECTROLYTE MEMBRANES AND METHODS FOR MAKING BHA ALTAIR, LLC 2009-12-03 US disclosed
US-20090297839-A1 Coating Compositions, Articles, and Methods of Coating Articles SDC TECHNOLOGIES, INC. (US) 2009-12-03 US disclosed
EP-2128921-A1 Polyelectrolyte membranes and methods for making General Electric Company (US) 2009-12-02 EP disclosed
EP-1090967-B1 Composition for film formation, method of film formation, and insulating film JSR CORP (JP) 2009-11-11 EP disclosed
US-7608928-B2 Laminated body and semiconductor device JSR CORPORATION (JP) 2009-10-27 US disclosed
US-20090251652-A1 Silica based positive type photosensitive organic compound HITACHI CHEMICAL CO., LTD. 2009-10-08 US disclosed
CN-101528974-A Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes APPLIED MATERIALS INC (US) 2009-09-09 CN disclosed
US-20090220897-A1 RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE HITACHI CHEMICAL CO., LTD. (JP) 2009-09-03 US disclosed
WO-2009105347-A2 PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH APPLIED MATERIALS, INC. (US) 2009-08-27 WO disclosed
US-20090214796-A1 Method for Forming Antireflection Film MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2009-08-27 US disclosed
US-20090208880-A1 PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH APPLIED MATERIALS, INC. (US) 2009-08-20 US disclosed
US-20090208880-A1 PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH APPLIED MATERIALS, INC. (US) 2009-08-20 US disclosed
EP-2082078-A2 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES Applied Materials, INC. (US) 2009-07-29 EP disclosed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-2071400-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials LLC (US) 2009-06-17 EP disclosed
US-20090148789-A1 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2009-06-11 US disclosed
US-7530683-B2 Fixing fluid and inkjet ink sets comprising same E.I. DU PONT DE NEMOURS AND COMPANY (US) 2009-05-12 US disclosed
EP-2003146-A9 CONJUGATED DIENE RUBBER, METHOD FOR PRODUCING THE SAME, RUBBER COMPOSITION FOR TIRE, AND TIRE ZEON CORPORATION (JP) 2009-05-06 EP disclosed
US-7528207-B2 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2009-05-05 US disclosed
WO-2009055340-A1 METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE APPLIED MATERIALS, INC. (US) 2009-04-30 WO disclosed
US-20090104791-A1 Methods for Forming a Silicon Oxide Layer Over a Substrate APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) 2009-04-23 US disclosed
US-20090104791-A1 Methods for Forming a Silicon Oxide Layer Over a Substrate APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) 2009-04-23 US disclosed
EP-2048541-A1 METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING LOWER-LAYER FILM JSR Corporation (JP) 2009-04-15 EP disclosed
EP-1127929-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2009-04-15 EP disclosed
US-7514151-B2 Insulating film and method for forming the same, and film-forming composition JSR CORPORATION (JP) 2009-04-07 US disclosed
EP-2042531-A1 BLOCK COPOLYMER, COMPOSITION FOR RESIN MODIFICATION, AND MODIFIED RESIN COMPOSITION ZEON CORPORATION (JP) 2009-04-01 EP disclosed
EP-2034364-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN JSR Corporation (JP) 2009-03-11 EP disclosed
EP-1778799-B1 FIXING FLUID AND INKJET INK SETS COMPRISING SAME DU PONT (US) 2009-03-04 EP disclosed
US-7498273-B2 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes APPLIED MATERIALS, INC. (US) 2009-03-03 US disclosed
US-7498273-B2 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes APPLIED MATERIALS, INC. (US) 2009-03-03 US disclosed
US-7488693-B2 Method for producing silicon oxide film TOAGOSEI CO., LTD. (JP) 2009-02-10 US disclosed
EP-2001965-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2008-12-17 EP disclosed
EP-2003146-A2 CONJUGATED DIENE RUBBER, METHOD FOR PRODUCING THE SAME, RUBBER COMPOSITION FOR TIRE, AND TIRE ZEON CORPORATION (JP) 2008-12-17 EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 US disclosed
US-20080268264-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-10-30 US disclosed
US-20080260956-A1 Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part HITACHI CHEMICAL CO., LTD. (JP) 2008-10-23 US disclosed
EP-1981074-A1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR Corporation (JP) 2008-10-15 EP disclosed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US disclosed
US-20080241748-A1 Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same CHEIL INDUSTRIES, INC. (KR) 2008-10-02 US disclosed
US-20080233330-A1 SILICON SUBSTRATE FOR MAGNETIC RECORDING MEDIA AND METHOD OF FABRICATING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-25 US disclosed
US-20080193831-A1 ANODE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, ANODE AND LITHIUM BATTERY CONTAINING THE MATERIAL SAMSUNG SDI CO., LTD. (KR) 2008-08-14 US disclosed
EP-1246239-B1 Method of forming dual damascene structure JSR CORP (JP) 2008-07-23 EP disclosed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US disclosed
US-20080166478-A1 Composite Material, Coating Liquid and Manufacturing Method of Composite Material TOTO LTD. (JP) 2008-07-10 US disclosed
US-20080145547-A1 Coating Compositions, Articles, And Methods Of Coating Articles SDC TECHNOLOGIES, INC. (US) 2008-06-19 US disclosed
WO-2008048862-A2 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES APPLIED MATERIALS, INC. (US) 2008-04-24 WO disclosed
US-20080044664-A1 Laminated Body and Semiconductor Drive JSR CORPORATION (JP) 2008-02-21 US disclosed
EP-1890172-A1 METHOD FOR FORMING ANTIREFLECTION FILM Hitachi Chemical Co., Ltd. (JP) 2008-02-20 EP disclosed
US-20080038527-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-02-14 US disclosed
US-20080014339-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2008-01-17 US disclosed
EP-1535976-B1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR CORP (JP) 2008-01-16 EP disclosed
US-7312013-B2 Photoreactive composition SEKISUI CHEMICAL CO., LTD. (JP) 2007-12-25 US disclosed
US-20070281495-A1 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES APPLIED MATERIALS, INC. (US) 2007-12-06 US disclosed
US-20070281495-A1 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES APPLIED MATERIALS, INC. (US) 2007-12-06 US disclosed
US-7297464-B2 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2007-11-20 US disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
WO-2007114808-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2007-10-11 WO disclosed
EP-1837173-A1 COMPOSITE MATERIAL, COATING FLUID AND METHOD FOR PRODUCING COMPOSITE MATERIAL TOTO LTD. (JP) 2007-09-26 EP disclosed
EP-1648709-B1 METHOD FOR MODIFYING THE SURFACE OF SUBSTRATE 3M INNOVATIVE PROPERTIES CO (US) 2007-09-19 EP disclosed
EP-1829945-A1 FILM, SILICA FILM AND METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING SILICA FILM, AND ELECTRONIC PART Hitachi Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-7265179-B2 Coating compositions, articles, and methods of coating articles SDC TECHNOLOGIES, INC. (US) 2007-09-04 US disclosed
EP-1814930-A2 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2007-08-08 EP disclosed
EP-1175466-B1 COMPOSITION FOR PROVIDING AN ABRASION-RESISTANT COATING SDC COATINGS INC (US) 2007-08-01 EP disclosed
US-20070173072-A1 Method for producing silicon oxide film TOAGOSEI CO., LTD. (JP) 2007-07-26 US disclosed
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-20070104968-A1 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2007-05-10 US disclosed
EP-1760774-A1 LAMINATED BODY AND SEMICONDUCTOR DEVICE JSR Corporation (JP) 2007-03-07 EP disclosed
US-20070031687-A1 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same JSR CORPORATION (JP) 2007-02-08 US disclosed
US-20070027287-A1 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same JSR CORPORATION (JP) 2007-02-01 US disclosed
US-20070020467-A1 Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same JSR CORPORATION (JP) 2007-01-25 US disclosed
US-20070021580-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-25 US disclosed
EP-1746139-A1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME JSR Corporation (JP) 2007-01-24 EP disclosed
EP-1088868-B1 Composition for film formation, method of film formation, and insulating film JSR CORP (JP) 2007-01-24 EP disclosed
EP-1746122-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
EP-1746123-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
US-20070015892-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-18 US disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
EP-1295924-B1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORP (JP) 2006-12-13 EP disclosed
US-20060275614-A1 Insulating film and method for forming the same, and film-forming composition JSR CORPORATION (JP) 2006-12-07 US disclosed
EP-1719793-A1 POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME JSR Corporation (JP) 2006-11-08 EP disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1717848-A1 METHOD FOR PRODUCING SILICON OXIDE FILM TOAGOSEI CO., LTD. (JP) 2006-11-02 EP disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
EP-1312649-B1 Stable composition SHIPLEY CO LLC (US) 2006-10-25 EP disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1705208-A1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1705206-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1705207-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
US-20060204742-A1 Electronic device manufacture SHIPLEY COMPANY, L.L.C. (US) 2006-09-14 US disclosed
US-7105598-B2 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. (US) 2006-09-12 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
US-7097704-B1 Tintable abrasion resistant coating composition and methods of making and using same SDC TECHNOLOGIES, INC. (US) 2006-08-29 US disclosed
EP-1122770-B1 Silica-based insulating film and its manufacture JSR CORP (JP) 2006-08-09 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
EP-1672427-A1 RADIATION-CURING COMPOSITION, METHOD FOR STORING SAME, METHOD FOR FORMING CURED FILM, METHOD FOR FORMING PATTERN, METHOD FOR USING PATTERN, ELECTRONIC COMPONENT, AND OPTICAL WAVEGUIDE Hitachi Chemical Co., Ltd. (JP) 2006-06-21 EP disclosed
EP-1672426-A1 RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE HITACHI CHEMICAL COMPANY, LTD. (JP) 2006-06-21 EP disclosed
WO-2006044340-A2 COATING COMPOSITIONS, ARTICLES, AND METHODS OF COATING ARTICLES SDC COATINGS, INC. (US) 2006-04-27 WO disclosed
EP-1648709-A1 METHOD FOR MODIFYING THE SURFACE OF SUBSTRATE 3M Innovative Properties Company (US) 2006-04-26 EP disclosed
US-7026053-B2 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-04-11 US disclosed
US-20060073423-A1 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-04-06 US disclosed
US-20060069171-A1 Composition and method ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-03-30 US disclosed
US-7018678-B2 Electronic device manufacture SHIPLEY COMPANY, L.L.C. (US) 2006-03-28 US disclosed
US-7014918-B2 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. (US) 2006-03-21 US disclosed
EP-1045290-B1 Composition for resist underlayer film and method for producing the same JSR CORP (JP) 2006-03-15 EP disclosed
US-7011868-B2 Fluorine-free plasma curing process for porous low-k materials AXCELIS TECHNOLOGIES, INC. (US) 2006-03-14 US disclosed
EP-1632956-A1 Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films Rohm and Haas Electronic Materials, L.L.C. (US) 2006-03-08 EP disclosed
EP-1146092-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-03-08 EP disclosed
EP-1627021-A1 METHOD FOR APPLYING ADHESIVE TO A SUBSTRATE 3M Innovative Properties Company (US) 2006-02-22 EP disclosed
US-7001642-B2 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. (US) 2006-02-21 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
US-20060023044-A1 Fixing fluid and inkjet ink sets comprising same E. I. DU PONT DE NEMOURS AND COMPANY 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed
US-20060006541-A1 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-01-12 US disclosed
EP-1615260-A2 Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device JSR Corporation (JP) 2006-01-11 EP disclosed
US-20050266344-A1 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2005-12-01 US disclosed
US-6969166-B2 Method for modifying the surface of a substrate 3M INNOVATIVE PROPERTIES COMPANY (US) 2005-11-29 US disclosed
US-6967222-B2 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2005-11-22 US disclosed
EP-1593149-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS Axcelis Technologies, Inc. (US) 2005-11-09 EP disclosed
US-20050239953-A1 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2005-10-27 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
EP-1117102-B1 Method of manufacturing material for forming insulating film JSR CORP (JP) 2005-08-10 EP disclosed
EP-1058274-B1 Composition for film formation and material for insulating film formation JSR CORP (JP) 2005-07-27 EP disclosed
US-6902771-B2 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-06-07 US disclosed
EP-1535976-A1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR Corporation (JP) 2005-06-01 EP disclosed
US-20050112386-A1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR CORPORATION (JP) 2005-05-26 US disclosed
US-20050113472-A1 Porous materials ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2005-05-26 US disclosed
US-6890605-B2 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2005-05-10 US disclosed
US-20050096415-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2005-05-05 US disclosed
EP-1520891-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR Corporation (JP) 2005-04-06 EP disclosed
EP-1146014-B1 Mesoporous silica films with mobile ion gettering and accelerated processing APPLIED MATERIALS INC (US) 2005-03-30 EP disclosed
US-20050042464-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-02-24 US disclosed
US-6852367-B2 A curable B-staged organo polysilsesquioxanes free of the alcohol of reaction and stabilized by an organic acid for longer shelf life; forming a dielectric film by curing and removing an included pore-forming material SHIPLEY COMPANY, L.L.C. (US) 2005-02-08 US disclosed
WO-2004106077-A1 METHOD FOR MODIFYING THE SURFACE OF SUBSTRATE 3M INNOVATIVE PROPERTIES COMPANY (US) 2004-12-09 WO disclosed
WO-2004106448-A1 METHOD FOR APPLYING ADHESIVE TO A SUBSTRATE 3M INNOVATIVE PROPERTIES COMPANY (US) 2004-12-09 WO disclosed
US-20040241451-A1 Method for modifying the surface of a substrate 3M INNOVATIVE PROPERTIES COMPANY 2004-12-02 US disclosed
US-20040241323-A1 Confining a liquid adhesive to a region of a substrate surface by first forming a fixed coating on a substrate with a boundary enclosing a region of the substrate surface and an average receding contact angle with water at least 30 degrees higher than the average receding contact angle of the enclosure 3M INNOVATIVE PROPERTIES COMPANY 2004-12-02 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
US-20040202956-A1 a photocurable mixture of a hydrolyzable metal (silyl) compound and a reaction, polymerization or crosslinking promoter; curing; adhesives, seals, semiconductors, dielectrics, microlenses, optical fibers, color filters, gas permeable films SEKISUI CHEMICAL CO., LTD. (JP) 2004-10-14 US disclosed
US-6800330-B2 PRODUCT OBTAINED BY HYDROLYZING AND CONDENSING AT LEAST ONE SILANE COMPOUND, A COMPOUND COMPATIBLE WITH OR DISPERSIBLE IN THAT COMPOUND AND HAVING A BOILING POINT OR DECOMPOSITION TEMPERATURE OF 250-450 DEGREES C, SOLVENT JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6787191-B2 Coating composition for the production of insulating thin films ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-09-07 US disclosed
US-6787193-B2 DECOMPOSITION OF AN ORGANOSILICON COMPOUND JSR CORPORATION (JP) 2004-09-07 US disclosed
WO-2004066374-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS AXCELIS TECHNOLOGIES, INC. (US) 2004-08-05 WO disclosed
EP-1137721-B1 COMPOSITION FOR PROVIDING AN ABRASION RESISTANT COATING ON A SUBSTRATE HAVING IMPROVED ADHESION AND IMPROVED RESISTANCE TO CRACK FORMATION SDC COATINGS INC (US) 2004-08-04 EP disclosed
US-20040130032-A1 Electronic device manufacture SHIPLEY COMPANY, L.L.C. 2004-07-08 US disclosed
US-6749944-B2 VAPOR DEPOSITION, OSCILLATION, HEATING USING ORGANOSILICON COMPOUND; FORMING DIELECTRIC JSR CORPORATION (JP) 2004-06-15 US disclosed
US-20040097647-A1 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. 2004-05-20 US disclosed
US-20040097646-A1 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. 2004-05-20 US disclosed
EP-1238024-B1 CURABLE INKJET PRINTABLE INK COMPOSITIONS 3M INNOVATIVE PROPERTIES CO (US) 2004-04-28 EP disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed
US-6719422-B2 Curable inkjet printable ink compositions 3M INNOVATIVE PROPERTIES COMPANY 2004-04-13 US disclosed
EP-1403925-A2 Dielectric material for electronic devices Shipley Co. L.L.C. (US) 2004-03-31 EP disclosed
US-20040052948-A1 Electronic device manufacture SHIPLEY COMPANY, L.L.C. 2004-03-18 US disclosed
EP-1391476-A1 PHOTOREACTIVE COMPOSITION SEKISUI CHEMICAL CO., LTD. (JP) 2004-02-25 EP disclosed
US-20040033700-A1 Electronic device manufacture SHIPLEY COMPANY, L.L.C. (US) 2004-02-19 US disclosed
US-20040028916-A1 Fluorine-free plasma curing process for porous low-k materials AXCELIS TECHNOLOGIES, INC. 2004-02-12 US disclosed
EP-1369908-A2 Methods for depositing pinhole-defect free organic polysilica coatings Shipley Company LLC (US) 2003-12-10 EP disclosed
US-20030224544-A1 Test method SHIPLEY COMPANY, L.L.C. 2003-12-04 US disclosed
US-6645881-B2 Method of forming coating film, method of manufacturing semiconductor device and coating solution KABUSHIKI KAISHA TOSHIBA (JP) 2003-11-11 US disclosed
US-6642352-B2 Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound JSR CORPORATION (JP) 2003-11-04 US disclosed
US-20030157340-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030139063-A1 Method of forming coating film, method of manufacturing semiconductor device and coating solution TOSHIBA MEMORY CORPORATION (JP) 2003-07-24 US disclosed
US-6582804-B2 A compound having 2 reactive silyl groups, a compound having >/= 3 reactive silyl groups, acid generating catalyst, and pigment or pigment chip printed thereon 3M INNOVATIVE PROPERTIES COMPANY 2003-06-24 US disclosed
US-6576393-B1 Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist JSR CORPORATION (JP) 2003-06-10 US disclosed
US-20030104225-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-06-05 US disclosed
US-20030099844-A1 Coating composition for the production of insulating thin films ASAHI KASEI KABUSHIKI KAISHA (JP) 2003-05-29 US disclosed
US-20030100644-A1 Stable composition SHIPLEY COMPANY, L.L.C. (US) 2003-05-29 US disclosed
EP-1312649-A2 Stable composition Shipley Co. L.L.C. (US) 2003-05-21 EP disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
US-6558747-B2 Dissolving methylpolysiloxane in solvent; applying solution to semiconductor substrate to form coating film; heat-treating to form organosilicon oxide film KABUSHIKI KAISHA TOSHIBA (JP) 2003-05-06 US disclosed
US-6559070-B1 Mesoporous silica films with mobile ion gettering and accelerated processing APPLIED MATERIALS, INC. 2003-05-06 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20030059550-A1 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
US-20030059628-A1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1296365-A2 Method of film formation, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
EP-1295924-A2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
US-20030031843-A1 Curable inkjet printable ink compositions 3M INNOVATIVE PROPERTIES COMPANY 2003-02-13 US disclosed
US-20030007050-A1 Curable inkjet printable ink compositions 3M INNOVATIVE PROPERTIES COMPANY 2003-01-09 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
US-20030008244-A1 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2003-01-09 US disclosed
US-6503633-B2 Semiconductors JSR CORPORATION (JP) 2003-01-07 US disclosed
US-20020189495-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-12-19 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
US-6495264-B2 HYDROLYSIS AND CONDENSATION OF SILANE COMPOUND IN PRESENCE OF WATER AND TETRAALKYLAMMONIUM HYDROXIDES, ALICYCLIC AMINES, AND METAL HYDROXIDES IN SOLVENT FOR FORMING DIELECTRIC LAYER FOR SEMICONDUCTORS JSR CORPORATION (JP) 2002-12-17 US disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
EP-1253175-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2002-10-30 EP disclosed
US-6472079-B2 PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). JSR CORPORATION (JP) 2002-10-29 US disclosed
US-6461419-B1 Curable inkjet printable ink compositions 3M INNOVATIVE PROPERTIES COMPANY 2002-10-08 US disclosed
US-20020142586-A1 Method of forming dual damascene structure JSR CORPORATION (JP) 2002-10-03 US disclosed
EP-1246239-A1 Method of forming dual damascene structure JSR Corporation (JP) 2002-10-02 EP disclosed
EP-1238024-A1 CURABLE INKJET PRINTABLE INK COMPOSITIONS 3M Innovative Properties Company (US) 2002-09-11 EP disclosed
US-20020086167-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-07-04 US disclosed
US-20020086169-A1 Method of forming insulating film and process for producing semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2002-07-04 US disclosed
US-6413647-B1 USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH JSR CORPORATION (JP) 2002-07-02 US disclosed
US-6410151-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6410150-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-6348269-B1 TRANSPARENT COATINGS UPON CURING; HYDROLYSIS PRODUCTS AND PARTIAL CONDENSATES OF AN EPOXY FUNCTIONAL SILANE AND A DISILANE AND A CARBOXYLIC ACID COMPONENT SDC COATINGS, INC. 2002-02-19 US disclosed
EP-1175466-A1 COMPOSITION FOR PROVIDING AN ABRASION-RESISTANT COATING SDC COATINGS, INC. (US) 2002-01-30 EP disclosed
US-6342097-B1 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC COATINGS, INC. 2002-01-29 US disclosed
US-20010056157-A1 Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability SDC TECHNOLOGIES, INC. 2001-12-27 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1146014-A2 Mesoporous silica films with mobile ion gettering and accelerated processing Applied Materials, Inc. (US) 2001-10-17 EP disclosed
EP-1137721-A1 COMPOSITION FOR PROVIDING AN ABRASION RESISTANT COATING ON A SUBSTRATE HAVING IMPROVED ADHESION AND IMPROVED RESISTANCE TO CRACK FORMATION SDC COATINGS, INC. (US) 2001-10-04 EP disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
WO-2001032789-A1 CURABLE INKJET PRINTABLE INK COMPOSITIONS 3M INNOVATIVE PROPERTIES COMPANY (US) 2001-05-10 WO disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
WO-2000064992-A1 COMPOSITION FOR PROVIDING AN ABRASION-RESISTANT COATING SDC COATINGS, INC. (US) 2000-11-02 WO disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
WO-2000024831-A1 COMPOSITION FOR PROVIDING AN ABRASION RESISTANT COATING ON A SUBSTRATE HAVING IMPROVED ADHESION AND IMPROVED RESISTANCE TO CRACK FORMATION SDC COATINGS, INC. (US) 2000-05-04 WO disclosed
US-5250646-A Reacting disilane with organometallic compound WACKER-CHEMIE GMBH (DE) 1993-10-05 US disclosed
US-5166287-A Reaction of a disilane to form polysiloxanes WACKER-CHEMIE GMBH (DE) 1992-11-24 US disclosed
EP-0486946-A2 Process for the production of metallopolysilanes and their use Wacker-Chemie GmbH (DE) 1992-05-27 EP disclosed
EP-0463624-A2 Process for preparing organopolysilanes WACKER-CHEMIE GMBH (DE) 1992-01-02 EP disclosed
US-4759959-A Reusable paint masking member MOLD-EX RUBBER COMPANY, INC. (US) 1988-07-26 US disclosed
US-4515901-A MIXING WITH PILLARING AGENT, DRYING, ROASTING TEXACO INC. (US) 1985-05-07 US disclosed
US-4395562-A FROM ALKYL ALLENE AND A DISILANE IN PRESENCE OF PHOSPHINE COMPLEX OF A TRANSITION METAL CHISSO CORPORATION (JP) 1983-07-26 US disclosed
US-4137391-A Continuous solution polymerization of a conjugated diene with a monovinylaromatic compound using alkoxysilicon treating agents in the first reactor means of a reactor series PHILLIPS PETROLEUM COMPANY (US) 1979-01-30 US disclosed
US-4137391-A Continuous solution polymerization of a conjugated diene with a monovinylaromatic compound using alkoxysilicon treating agents in the first reactor means of a reactor series PHILLIPS PETROLEUM COMPANY (US) 1979-01-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210323983-A1 STABLE SILYLATING REAGENTS KCNH3, KCNH2, KCNH1 CA1 69/4885CA2 168/4885
US-12575404-B2 Semiconductor device with protection layer and method for fabricating the same DSG1, RAD51, SOS1 CA1 2334/4885CA2 3616/4885
US-11028107-B2 Stable silylating reagents OGDH, CD44, SOD1 CA1 36/4885CA2 112/4885
US-20110042789-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM SAT1, SUV39H2, SUV39H1 CA1 217/4885CA2 1983/4885
US-20170240571-A1 STABLE SILYLATING REAGENTS OGDH, CD44, SOD1 CA1 36/4885CA2 112/4885
US-20260040913-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME TES, LSM8, TESK2 CA1 3059/4885CA2 4399/4885
US-20260040912-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME DSTN, TES, CD2 CA1 3490/4885CA2 4295/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.