SCHEMBL685346

SCHEMBL685346

Cc1ccc([S+](c2ccccc2)c2ccc(Oc3ccccc3)cc2)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.55
SMN1; SMN2 Q16637 1/20 0.55
LTA4H P09960 6/20 0.48
TSHR P16473 1/20 0.48
TEAD4 Q15561 1/20 0.47
FFAR1 O14842 1/20 0.46
TDP1 Q9NUW8 2/20 0.45
ALDH1A1 P00352 1/20 0.45
POLB P06746 1/20 0.45
MAPT P10636 1/20 0.45
NR1H2 P55055 1/20 0.43
BAX Q07812 1/20 0.43
MAOA P21397 1/20 0.43
MAPK14 Q16539 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.41
EPHX2 P34913 1/20 0.41
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
NR3C1 P04150 1/20 0.40
DRD2 P14416 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685974 0.98 HTT (0.52) HTTSMN1; SMN2LTA4HTSHRTEAD4
SCHEMBL686351 0.98 HTT (0.52) HTTSMN1; SMN2LTA4HTSHRTEAD4
SCHEMBL686357 0.98 HTT (0.56) HTTSMN1; SMN2LTA4HTSHRTEAD4
SCHEMBL686073 0.98 HTT (0.52) HTTSMN1; SMN2LTA4HTSHRTEAD4
SCHEMBL686232 0.89 LTA4H (0.60) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL686233 0.89 TEAD4 (0.56) HTTSMN1; SMN2TSHRTEAD4FFAR1
SCHEMBL686076 0.89 TEAD4 (0.56) HTTSMN1; SMN2TSHRTEAD4FFAR1
SCHEMBL6660652 0.88 HTT (0.44) HTTSMN1; SMN2LTA4HTSHRTEAD4
SCHEMBL686239 0.87 LTA4H (0.55) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL5397497 0.87 LTA4H (0.63) LTA4HTSHRNR1H2BAXMAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 146 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9429841-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-30 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-7262321-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-28 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 US disclosed
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 US disclosed
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-05-03 US disclosed
US-20070088131-A1 Sulfonate and resist composition TOISHI KOUJI 2007-04-19 US disclosed
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same KCNH3, KCNN4, NHERF1 HTT 1576/4885SMN1; SMN2 4025/4885LTA4H 2414/4885
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN3, NHERF1, HCN4 HTT 780/4885SMN1; SMN2 4545/4885LTA4H 3468/4885
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN4, HCN3, HCN1 HTT 1045/4885SMN1; SMN2 4515/4885LTA4H 3821/4885
US-10377692-B2 Photoresist composition C1R, C1S, F12 HTT 656/4885SMN1; SMN2 3940/4885LTA4H 353/4885
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, RFC1, RFC2 HTT 1301/4885SMN1; SMN2 3880/4885LTA4H 4249/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.