SCHEMBL685972

SCHEMBL685972

COC(=O)COC(=O)C(C)(C)F

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.39
MGAM O43451 2/20 0.36
GAA P10253 2/20 0.36
SI P14410 2/20 0.36
MGAM2 Q2M2H8 2/20 0.36
HSD17B10 Q99714 1/20 0.36
TET2 Q6N021 1/20 0.34
RECQL P46063 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
ALDH1A1 P00352 1/20 0.32
LMNA P02545 2/20 0.32
CA2 P00918 2/20 0.31
CA1 P00915 1/20 0.31
DGAT1 O75907 1/20 0.31
PDK2 Q15119 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
CA12 O43570 1/20 0.30
CA14 Q9ULX7 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685234 0.87 TSHR (0.39) TSHRMGAMGAASIMGAM2
SCHEMBL21576125 0.84 TSHR (0.40) TSHRMGAMGAASIMGAM2
SCHEMBL685239 0.83 TSHR (0.36) TSHRMGAMGAASIMGAM2
SCHEMBL12345765 0.82 TSHR (0.42) TSHRMGAMGAASIMGAM2
SCHEMBL686133 0.81 GAA (0.44) TSHRMGAMGAASIMGAM2
SCHEMBL18350230 0.81 TSHR (0.37) TSHRMGAMGAASIMGAM2
SCHEMBL9312029 0.80 TSHR (0.40) TSHRMGAMGAASIMGAM2
SCHEMBL24360973 0.78 TSHR (0.34) TSHRMGAMGAASIMGAM2
SCHEMBL2607778 0.77 TET2 (0.38) TSHRMGAMGAASIMGAM2
SCHEMBL10884694 0.77 TSHR (0.37) TSHRMGAMGAASIMGAM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8900790-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-02 US disclosed
US-8852846-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-10-07 US disclosed
US-8574811-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-11-05 US disclosed
US-8546059-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-10-01 US disclosed
US-8530135-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8530137-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8460851-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-06-11 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120009519-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-01-12 US disclosed
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110200935-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-14 US disclosed
US-20110123926-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-26 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 TSHR 1877/4885MGAM 4511/4885GAA 4334/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S TSHR 2353/4885MGAM 4552/4885GAA 4227/4885
US-20110200935-A1 PHOTORESIST COMPOSITION C1R, F12, C1S TSHR 2611/4885MGAM 4751/4885GAA 4473/4885
US-20120009519-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION C1R, C1S, C9 TSHR 2013/4885MGAM 4105/4885GAA 3958/4885
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION RCOR1, C1R, C1S TSHR 3451/4885MGAM 4214/4885GAA 4514/4885
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CLIC1, SLC10A6, APOL1 TSHR 1498/4885MGAM 4710/4885GAA 4727/4885
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME RER1, AFF1, FRG1 TSHR 419/4885MGAM 4731/4885GAA 4859/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.