SCHEMBL685239

SCHEMBL685239

COC(=O)COC(=O)C(C)(C)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.36
HSD17B10 Q99714 1/20 0.33
MGAM O43451 1/20 0.33
GAA P10253 1/20 0.33
SI P14410 1/20 0.33
MGAM2 Q2M2H8 1/20 0.33
TET2 Q6N021 1/20 0.32
RECQL P46063 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
ALDH1A1 P00352 2/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685234 0.83 TSHR (0.39) TSHRHSD17B10MGAMGAASI
SCHEMBL685972 0.83 TSHR (0.39) TSHRHSD17B10MGAMGAASI
SCHEMBL21576125 0.81 TSHR (0.40) TSHRHSD17B10MGAMGAASI
SCHEMBL12345765 0.79 TSHR (0.42) TSHRHSD17B10MGAMGAASI
SCHEMBL9312029 0.77 TSHR (0.40) TSHRHSD17B10MGAMGAASI
SCHEMBL776194 0.75 DGAT1 (0.42) GAAL3MBTL1ALDH1A1LMNA
SCHEMBL24360973 0.74 TSHR (0.34) TSHRHSD17B10MGAMGAASI
SCHEMBL10134609 0.74 CA12 (0.32) TSHR
SCHEMBL10134610 0.74 CA12 (0.32) TSHR
SCHEMBL776033 0.74 PKM (0.44) TSHRHSD17B10MGAMGAASI

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8900790-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-02 US disclosed
US-8852846-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-10-07 US disclosed
US-8574811-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-11-05 US disclosed
US-8546059-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-10-01 US disclosed
US-8530135-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8530137-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8460851-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-06-11 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120009519-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-01-12 US disclosed
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110200935-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-14 US disclosed
US-20110123926-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-26 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 TSHR 1877/4885HSD17B10 3194/4885MGAM 4511/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S TSHR 2353/4885HSD17B10 855/4885MGAM 4552/4885
US-20110200935-A1 PHOTORESIST COMPOSITION C1R, F12, C1S TSHR 2611/4885HSD17B10 2060/4885MGAM 4751/4885
US-20120009519-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION C1R, C1S, C9 TSHR 2013/4885HSD17B10 1652/4885MGAM 4105/4885
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION RCOR1, C1R, C1S TSHR 3451/4885HSD17B10 3256/4885MGAM 4214/4885
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CLIC1, SLC10A6, APOL1 TSHR 1498/4885HSD17B10 2371/4885MGAM 4710/4885
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME RER1, AFF1, FRG1 TSHR 419/4885HSD17B10 2146/4885MGAM 4731/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.