SCHEMBL6931310

SCHEMBL6931310

CCS(=O)(=O)C(=[N+]=[N-])C(=O)c1ccc(Br)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.47
CES1 P23141 1/20 0.47
HTT P42858 1/20 0.45
GSK3B P49841 2/20 0.41
KMT2A Q03164 2/20 0.39
HSD11B1 P28845 1/20 0.38
HDAC3 O15379 5/20 0.37
HDAC1 Q13547 5/20 0.37
HDAC2 Q92769 5/20 0.37
OGG1 O15527 1/20 0.37
POLB P06746 1/20 0.36
CTDSP1 Q9GZU7 1/20 0.36
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
NHERF1 O14745 1/20 0.36
HDAC10 Q969S8 2/20 0.36
HDAC11 Q96DB2 2/20 0.36
HDAC8 Q9BY41 2/20 0.36
HDAC6 Q9UBN7 2/20 0.36
HDAC4 P56524 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6931693 0.83 CES2 (0.47) CES2CES1HSD11B1LMNAMAPT
SCHEMBL6927935 0.83 CES2 (0.50) CES2CES1HTTGSK3BKMT2A
SCHEMBL9010901 0.76 KMT2A (0.51) CES2CES1HTTKMT2APOLB
SCHEMBL9010850 0.75 CA2 (0.49) CES2CES1KMT2AHSD11B1CA1
SCHEMBL22230717 0.69 MAPT (0.48) CES2CES1HTTGSK3BKMT2A
SCHEMBL29015897 0.68 CES2 (0.52) CES2CES1HTTGSK3BKMT2A
SCHEMBL557285 0.67 CES2 (1.00) CES2CES1HTTGSK3BKMT2A
SCHEMBL384658 0.66 CES2 (0.46) CES2CES1KMT2ALMNAMAPT
SCHEMBL9010795 0.66 CES2 (0.48) CES2CES1HTTKMT2AHSD11B1
SCHEMBL17338792 0.65 KMT2A (0.50) CES2CES1HTTGSK3BKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed
EP-0417556-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
US-5340682-A Sensitive, heat resistant, noncorrosive HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-23 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417556-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed