SCHEMBL702434

SCHEMBL702434

CCCCCCCC(CCCC)O[SiH2]CCC[SiH2]OC(CCCC)CCCCCCC

nearest known ligand 0.39

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.39
LMNA P02545 1/20 0.35
CA2 P00918 1/20 0.34
SMPD1 P17405 3/20 0.33
OPRM1 P35372 1/20 0.33
TSHR P16473 1/20 0.33
THRB P10828 1/20 0.33
FDPS P14324 3/20 0.32
GPR84 Q9NQS5 2/20 0.32
ZDHHC7 Q9NXF8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708162 1.00 DNM1 (0.39) DNM1LMNACA2SMPD1OPRM1
SCHEMBL706751 0.98 DNM1 (0.36) DNM1LMNACA2SMPD1OPRM1
SCHEMBL704550 0.96 DNM1 (0.39) DNM1LMNACA2SMPD1OPRM1
SCHEMBL704163 0.96 DNM1 (0.39) DNM1LMNACA2SMPD1OPRM1
SCHEMBL702102 0.96 LMNA (0.35) DNM1LMNASMPD1OPRM1TSHR
SCHEMBL713161 0.94 OPRM1 (0.34) DNM1LMNASMPD1OPRM1FDPS
SCHEMBL705786 0.94 DNM1 (0.36) DNM1LMNACA2SMPD1OPRM1
SCHEMBL706863 0.94 DNM1 (0.41) DNM1LMNACA2SMPD1OPRM1
SCHEMBL704530 0.94 DNM1 (0.41) DNM1LMNACA2SMPD1OPRM1
SCHEMBL707568 0.94 DNM1 (0.33) DNM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed