SCHEMBL707568

SCHEMBL707568

CCCCC(CCCC)O[SiH2]CCC[SiH2]OC(CCCC)CCCC

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.33
ALDH1A1 P00352 2/20 0.30
CTSK P43235 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705226 0.98 CTSK (0.33) DNM1CTSK
SCHEMBL706751 0.96 DNM1 (0.36) DNM1
SCHEMBL703662 0.95 DNM1 (0.33) DNM1ALDH1A1CTSKTDP1
SCHEMBL702434 0.94 DNM1 (0.39) DNM1
SCHEMBL708162 0.94 DNM1 (0.39) DNM1
SCHEMBL703536 0.93 CTSK (0.33) DNM1CTSK
SCHEMBL5570833 0.93 CTSK (0.33) DNM1CTSK
SCHEMBL703498 0.93 DNM1 (0.35) DNM1ALDH1A1CTSKTDP1
SCHEMBL713161 0.91 OPRM1 (0.34) DNM1
SCHEMBL705902 0.91 PRKCA (0.33) DNM1ALDH1A1CTSKTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed