SCHEMBL703379

SCHEMBL703379

CCO[Si](c1ccccc1)(c1ccccc1)c1ccc([Si](OCC)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.37
ESR2 Q92731 1/20 0.37
DUT P33316 1/20 0.37
LTA4H P09960 1/20 0.35
L3MBTL1 Q9Y468 3/20 0.35
TP53 P04637 2/20 0.35
ACHE P22303 1/20 0.33
NPSR1 Q6W5P4 2/20 0.32
KMT2A Q03164 2/20 0.32
RELA Q04206 1/20 0.32
MEN1 O00255 1/20 0.32
KDM4E B2RXH2 2/20 0.32
POLB P06746 1/20 0.32
MAPT P10636 1/20 0.32
OPRM1 P35372 1/20 0.32
OPRD1 P41143 1/20 0.32
RAD52 P43351 1/20 0.32
ALDH1A1 P00352 2/20 0.32
TSHR P16473 2/20 0.32
NPC1 O15118 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL238216 0.98 DUT (0.38) ESR1ESR2DUTLTA4HL3MBTL1
SCHEMBL3482014 0.92 HPGD (0.39) DUTACHENPSR1KMT2ARELA
SCHEMBL3482491 0.90 TP53 (0.48) L3MBTL1TP53KDM4EPOLBMAPT
SCHEMBL9249663 0.87 DUT (0.36) ESR1ESR2DUTLTA4HL3MBTL1
SCHEMBL8639537 0.86 L3MBTL1 (0.33) ESR1ESR2DUTLTA4HL3MBTL1
SCHEMBL15863932 0.86 DUT (0.33) DUTLTA4HL3MBTL1
SCHEMBL3481888 0.84 MAPT (0.34) DUTL3MBTL1TP53ACHEKMT2A
SCHEMBL703766 0.82 DUT (0.41) ESR1ESR2DUTLTA4HTP53
SCHEMBL1314029 0.81 TSHR (0.33) LTA4HL3MBTL1ACHEKMT2AMEN1
SCHEMBL3867374 0.81 ACHE (0.38) ACHEKMT2AMEN1POLBMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed