SCHEMBL704603

SCHEMBL704603

CC(C)([SiH2]F)C(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.41
HRH1 P35367 4/20 0.39
HTR2A P28223 4/20 0.39
CHRM2 P08172 3/20 0.38
ADRA1A P35348 3/20 0.38
KCNH2 Q12809 3/20 0.38
CHRM1 P11229 2/20 0.38
SLC6A3 Q01959 2/20 0.38
SLC6A4 P31645 2/20 0.38
CACNA1F O60840 1/20 0.38
ADRA2B P18089 1/20 0.38
CHRM3 P20309 1/20 0.38
OPRK1 P41145 1/20 0.38
CACNA1D Q01668 1/20 0.38
CACNA1S Q13698 1/20 0.38
CACNA1C Q13936 1/20 0.38
SCN5A Q14524 1/20 0.38
CYP3A4 P08684 3/20 0.38
CYP2D6 P10635 2/20 0.38
CYP2C19 P33261 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2480309 0.77 RIPK1 (0.41) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL708031 0.77 RIPK1 (0.41) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL8812232 0.77 RIPK1 (0.41) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL187205 0.77 RIPK1 (0.41) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL9452316 0.76 RIPK1 (0.39) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL3018884 0.73 RIPK1 (0.40) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL343426 0.73 LMNA (0.41) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL5029899 0.72 RIPK1 (0.43) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL704144 0.71 ATM (0.39) RIPK1HRH1HTR2ACHRM2ADRA1A
SCHEMBL705924 0.71 RIPK1 (0.40) RIPK1HRH1CHRM2ADRA1AKCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed