SCHEMBL704933

SCHEMBL704933

CC(=O)O[Si](c1ccccc1)(C(C)C)C(C)C

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39
MTNR1A P48039 4/20 0.39
MTNR1B P49286 4/20 0.39
ALDH1A1 P00352 3/20 0.38
CYP3A4 P08684 1/20 0.37
MAPT P10636 1/20 0.37
HPGD P15428 2/20 0.36
TSHR P16473 2/20 0.36
ELANE P08246 1/20 0.36
KDM4E B2RXH2 1/20 0.36
ESR1 P03372 1/20 0.36
ITGB3 P05106 1/20 0.36
ITGA2B P08514 1/20 0.36
HMGB1 P09429 1/20 0.36
GGT1 P19440 1/20 0.36
PTGS1 P23219 1/20 0.36
PTGS2 P35354 1/20 0.36
BLM P54132 1/20 0.36
NAPRT Q6XQN6 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705706 0.90 TSHR (0.33) MTNR1AMTNR1BHPGDTSHR
SCHEMBL2184733 0.83 ELANE (0.42) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL703027 0.82 MTNR1A (0.38) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL705565 0.82 MTNR1A (0.38) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL14062436 0.82 LMNA (0.44) CES2CES1ALDH1A1MAPTHPGD
SCHEMBL21496260 0.78 THRB (0.39) MTNR1AMTNR1BALDH1A1CYP3A4MAPT
SCHEMBL132933 0.77 CES2 (0.43) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL476126 0.77 CES2 (0.43) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL132756 0.77 CES2 (0.43) CES2CES1MTNR1AMTNR1BALDH1A1
SCHEMBL28797506 0.77 HCAR2 (0.38) MTNR1AMTNR1BALDH1A1MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed