SCHEMBL705565

SCHEMBL705565

CC(=O)O[Si](c1ccccc1)(c1ccccc1)C(C)C

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MTNR1A P48039 4/20 0.38
MTNR1B P49286 4/20 0.38
CES2 O00748 1/20 0.38
CES1 P23141 1/20 0.38
ALDH1A1 P00352 3/20 0.37
CYP3A4 P08684 1/20 0.36
MAPT P10636 1/20 0.36
HPGD P15428 2/20 0.35
TSHR P16473 2/20 0.35
ELANE P08246 1/20 0.35
KDM4E B2RXH2 1/20 0.35
ESR1 P03372 1/20 0.35
ITGB3 P05106 1/20 0.35
ITGA2B P08514 1/20 0.35
HMGB1 P09429 1/20 0.35
GGT1 P19440 1/20 0.35
PTGS1 P23219 1/20 0.35
PTGS2 P35354 1/20 0.35
BLM P54132 1/20 0.35
NAPRT Q6XQN6 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2182615 0.84 ELANE (0.41) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL704933 0.82 CES2 (0.39) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL703027 0.81 MTNR1A (0.38) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL21496195 0.79 THRB (0.38) MTNR1AMTNR1BALDH1A1CYP3A4MAPT
SCHEMBL15915541 0.77 POLB (0.35) ALDH1A1MAPTTSHRKDM4EESR1
SCHEMBL132756 0.75 CES2 (0.43) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL132933 0.75 CES2 (0.43) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL476126 0.75 CES2 (0.43) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL6702137 0.74 ALOX5 (0.36) MTNR1AMTNR1BCES2CES1ALDH1A1
SCHEMBL704615 0.74 CES2 (0.41) MTNR1AMTNR1BCES2CES1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed