SCHEMBL705706

SCHEMBL705706

CC(=O)O[Si](c1ccc([Si](OC(C)=O)(C(C)C)C(C)C)cc1)(C(C)C)C(C)C

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.33
LMNA P02545 1/20 0.31
HPGD P15428 1/20 0.31
MTNR1A P48039 2/20 0.31
MTNR1B P49286 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14062436 0.92 LMNA (0.44) LMNAHPGD
SCHEMBL704933 0.90 CES2 (0.39) TSHRHPGDMTNR1AMTNR1B
SCHEMBL705831 0.80 TSHR (0.32) TSHRLMNAHPGDMTNR1AMTNR1B
SCHEMBL706708 0.73 HPGD (0.34) TSHRLMNAHPGD
SCHEMBL2184733 0.72 ELANE (0.42) TSHRLMNAHPGDMTNR1AMTNR1B
SCHEMBL475861 0.72 TSHR (0.41) TSHR
SCHEMBL706767 0.71 HPGD (0.38) TSHRLMNAHPGD
SCHEMBL705277 0.71 HPGD (0.38) TSHRLMNAHPGD
SCHEMBL703027 0.71 MTNR1A (0.38) TSHRHPGDMTNR1AMTNR1B
SCHEMBL705565 0.71 MTNR1A (0.38) TSHRHPGDMTNR1AMTNR1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed