SCHEMBL705123

SCHEMBL705123

CCC(O[SiH3])c1ccccc1C(C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2C19 P33261 2/20 0.36
CYP3A4 P08684 1/20 0.36
CYP2C9 P11712 1/20 0.36
ALDH1A1 P00352 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
CA2 P00918 1/20 0.32
MAPT P10636 1/20 0.31
CYP2D6 P10635 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707595 0.86 TSHR (0.33) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL707649 0.85 CA2 (0.33) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL1790143 0.78 TSHR (0.36) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL705169 0.76 ESR1 (0.47) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL715340 0.76 TSHR (0.39) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL713134 0.76 ALDH1A1 (0.39) TSHRCYP2C19CYP3A4ALDH1A1TDP1
SCHEMBL28562630 0.75 TSHR (0.47) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL707358 0.74 MAPT (0.38) TSHRCYP3A4ALDH1A1MAPTCYP2D6
SCHEMBL24620116 0.73 TSHR (0.55) TSHRCYP1A2CYP2C19CYP3A4CYP2C9
SCHEMBL703822 0.72 CA2 (0.32) CYP2C19CYP2C9CA2CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed