SCHEMBL707595

SCHEMBL707595

CCCC(O[SiH3])c1ccccc1C(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.33
CYP2C9 P11712 2/20 0.33
CYP2C19 P33261 2/20 0.33
ALDH1A1 P00352 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
TP53 P04637 1/20 0.33
CYP2D6 P10635 1/20 0.33
ALOX15 P16050 1/20 0.33
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
SLC6A4 P31645 1/20 0.31
CA2 P00918 1/20 0.31
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705123 0.86 TSHR (0.36) TSHRCYP2C9CYP2C19ALDH1A1TDP1
SCHEMBL703822 0.86 CA2 (0.32) CYP2C9CYP2C19TP53CYP2D6ALOX15
SCHEMBL28519584 0.80 TSHR (0.34) TSHRCYP2C9CYP2C19ALDH1A1TDP1
SCHEMBL10415321 0.80 PRSS1 (0.33) TSHRCYP2C9CYP2C19ALDH1A1TDP1
SCHEMBL703010 0.77 ESR1 (0.44) TSHRCYP2C9CYP2C19TP53CYP2D6
SCHEMBL707196 0.77 GABRA1 (0.36) TSHRCYP1A2CYP3A4CA2
SCHEMBL702730 0.76 TAS1R3 (0.36) TSHRCYP2D6CYP3A4SLC6A4MAPT
SCHEMBL6055140 0.74 TSHR (0.41) TSHRCYP2C9CYP2C19ALDH1A1TDP1
SCHEMBL713134 0.73 ALDH1A1 (0.39) TSHRCYP2C19ALDH1A1TDP1CYP3A4
SCHEMBL706089 0.72 CYSLTR2 (0.43) CYP2C9CYP2D6CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed