SCHEMBL707358

SCHEMBL707358

CCc1ccccc1C(CC)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
NPSR1 Q6W5P4 1/20 0.38
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
SLC6A2 P23975 1/20 0.35
SLC6A4 P31645 1/20 0.35
SLC6A3 Q01959 1/20 0.35
KCNH2 Q12809 1/20 0.35
GABRA1 P14867 2/20 0.34
GABRB2 P47870 2/20 0.34
TSHR P16473 1/20 0.34
OPRM1 P35372 1/20 0.33
OPRD1 P41143 1/20 0.33
OPRK1 P41145 1/20 0.33
OPRL1 P41146 1/20 0.33
MGLL Q99685 1/20 0.32
ALDH1A1 P00352 1/20 0.31
HTT P42858 1/20 0.30
HPGD P15428 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702730 0.85 TAS1R3 (0.36) MAPTL3MBTL1NPSR1CYP3A4CYP2D6
SCHEMBL3481497 0.85 ADRA2A (0.40) TSHR
SCHEMBL706646 0.84 GABRA1 (0.35) MAPTL3MBTL1NPSR1KCNH2GABRA1
SCHEMBL704445 0.82 CYSLTR2 (0.40) CYP3A4CYP2D6
SCHEMBL3482257 0.81 CYSLTR2 (0.46)
SCHEMBL8750412 0.81 L3MBTL1 (0.42) MAPTL3MBTL1NPSR1CYP3A4CYP2D6
SCHEMBL705287 0.78 MAPT (0.39) MAPTL3MBTL1NPSR1CYP3A4CYP2D6
SCHEMBL715340 0.78 TSHR (0.39) L3MBTL1CYP3A4SLC6A2GABRA1GABRB2
SCHEMBL705169 0.78 ESR1 (0.47) NPSR1CYP3A4CYP2D6SLC6A2SLC6A4
SCHEMBL11602112 0.74 CYP3A4 (0.51) MAPTL3MBTL1NPSR1CYP3A4CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed