SCHEMBL705352

SCHEMBL705352

CCCc1ccccc1O[SiH3]

nearest known ligand 0.46

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
HTR1A P08908 2/20 0.44
ADRA2A P08913 2/20 0.44
ADRA2B P18089 2/20 0.44
ADRA2C P18825 2/20 0.44
NISCH Q9Y2I1 1/20 0.44
TAAR1 Q96RJ0 1/20 0.44
SLC6A2 P23975 2/20 0.41
SLC6A4 P31645 2/20 0.41
SLC6A3 Q01959 2/20 0.41
PPARD Q03181 1/20 0.41
AR P10275 1/20 0.39
SIGMAR1 Q99720 1/20 0.39
AOC3 Q16853 1/20 0.39
LTB4R Q15722 1/20 0.38
LTB4R2 Q9NPC1 1/20 0.38
THRA P10827 1/20 0.38
THRB P10828 1/20 0.38
KCNH2 Q12809 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705035 0.88 THRA (0.46) TAAR1THRATHRB
SCHEMBL2112426 0.86 ALOX5 (0.53) TAAR1THRATHRB
SCHEMBL2202797 0.82 SLC6A2 (0.54) HTR1AADRA2AADRA2BADRA2CNISCH
SCHEMBL707317 0.82 L3MBTL1 (0.53) ADRA2AADRA2BADRA2CNISCHTAAR1
SCHEMBL18784878 0.82 LTB4R (0.42) HTR1AADRA2AADRA2BADRA2CNISCH
SCHEMBL29467401 0.80 TAAR1 (0.67) TAAR1SIGMAR1AOC3KCNH2
SCHEMBL158584 0.80 TAAR1 (0.67) TAAR1SIGMAR1AOC3KCNH2
SCHEMBL707310 0.79 CTSL (0.38) HTR1AADRA2AADRA2BADRA2CNISCH
SCHEMBL15201535 0.78 TAAR1 (0.64) TAAR1SIGMAR1AOC3KCNH2
SCHEMBL13663855 0.78 TAAR1 (0.48) HTR1AADRA2AADRA2BADRA2CNISCH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed