SCHEMBL705035

SCHEMBL705035

CCCCc1ccccc1O[SiH3]

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRA P10827 1/20 0.46
THRB P10828 1/20 0.46
ALOX5 P09917 1/20 0.46
PTGS2 P35354 1/20 0.46
LIPG Q9Y5X9 1/20 0.43
TAAR1 Q96RJ0 1/20 0.41
PPARA Q07869 2/20 0.41
CYP2C9 P11712 2/20 0.40
CYP1A2 P05177 1/20 0.40
CYP2C19 P33261 1/20 0.40
CYP3A4 P08684 1/20 0.40
CYP2D6 P10635 1/20 0.40
PPARG P37231 1/20 0.39
CSNK1A1 P48729 1/20 0.38
CSNK1D P48730 1/20 0.38
PRKCD Q05655 1/20 0.38
PAK1 Q13153 1/20 0.38
CAMK2B Q13554 1/20 0.38
CAMK2G Q13555 1/20 0.38
CAMK2D Q13557 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2112426 0.94 ALOX5 (0.53) THRATHRBALOX5PTGS2LIPG
SCHEMBL705352 0.88 HTR1A (0.44) THRATHRBTAAR1
SCHEMBL705396 0.85 ALOX5 (0.41) THRATHRBALOX5PTGS2LIPG
SCHEMBL36193 0.83 THRA (0.49) THRATHRBALOX5PTGS2LIPG
SCHEMBL18784864 0.83 PTGS2 (0.46) THRATHRBALOX5PTGS2LIPG
SCHEMBL29368559 0.82 TAAR1 (0.62) ALOX5PTGS2TAAR1PPARA
SCHEMBL144885 0.82 TAAR1 (0.62) ALOX5PTGS2TAAR1PPARA
SCHEMBL704334 0.80 PTGS2 (0.41) THRATHRBALOX5PTGS2LIPG
SCHEMBL6681802 0.80 L3MBTL1 (0.56) THRATHRBALOX5PTGS2CYP2C9
SCHEMBL919038 0.80 CYP1A2 (0.58) THRATHRBALOX5PTGS2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed