SCHEMBL705410

SCHEMBL705410

CCCCC(CCCC)[SiH2]OC(C)=O

nearest known ligand 0.40

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.40
CA2 P00918 9/20 0.38
CA1 P00915 4/20 0.38
MAPK1 P28482 1/20 0.38
FDPS P14324 1/20 0.34
TSHR P16473 2/20 0.34
CYP3A4 P08684 1/20 0.34
ATM Q13315 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
PLA2G2C Q5R387 1/20 0.34
ACE2 Q9BYF1 1/20 0.33
SLC1A3 P43003 1/20 0.32
SLC1A2 P43004 1/20 0.32
SLC1A1 P43005 1/20 0.32
ZDHHC7 Q9NXF8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27660666 0.70 DNM1 (0.36) ALDH1A1CA2CA1MAPK1FDPS
SCHEMBL704081 0.69 DNM1 (0.35) ALDH1A1CA2CA1FDPSTSHR
SCHEMBL705232 0.67 DNM1 (0.33) ALDH1A1TDP1
SCHEMBL705012 0.67 ADRB2 (0.35) ALDH1A1TSHRCYP3A4TDP1
SCHEMBL702801 0.67 DNM1 (0.33) ALDH1A1TSHRCYP3A4TDP1
SCHEMBL8669152 0.67 PRKCA (0.47) ALDH1A1CA2CA1MAPK1TSHR
SCHEMBL702887 0.67
SCHEMBL11140994 0.67 ALDH1A1 (0.44) ALDH1A1CA2CA1MAPK1FDPS
SCHEMBL7758113 0.67
SCHEMBL2352525 0.67 ALDH1A1 (0.35) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed