SCHEMBL705956

SCHEMBL705956

Br[SiH](Br)CCc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.52
ALDH1A1 P00352 2/20 0.48
HPGD P15428 1/20 0.48
ALOX15 P16050 1/20 0.48
ALOX12 P18054 1/20 0.48
CASP1 P29466 1/20 0.48
HSD17B10 Q99714 1/20 0.48
TAAR1 Q96RJ0 3/20 0.46
CYP2A6 P11509 1/20 0.46
HTR2A P28223 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
LOXL2 Q9Y4K0 1/20 0.46
TRPA1 O75762 1/20 0.43
TSHR P16473 1/20 0.43
MAOA P21397 3/20 0.42
MAOB P27338 2/20 0.42
CALM1 P0DP23 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
SIGMAR1 Q99720 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708301 0.85 SIGMAR1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL705290 0.83 MAOA (0.52) TDP1HTR2AMAOAMAOBSIGMAR1
SCHEMBL2457739 0.78 ALDH1A1 (0.52) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL297259 0.74 ALDH1A1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL4514776 0.74 TDP1 (0.52) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL476138 0.74 TP53 (0.50) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL7749434 0.74 ALDH1A1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL8383813 0.74 ALDH1A1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL22283514 0.74 ALDH1A1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL702837 0.74 ALDH1A1 (0.48) TDP1ALDH1A1HPGDALOX15ALOX12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed