SCHEMBL708301

SCHEMBL708301

Br[SiH](Br)CCCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 4/20 0.48
MAOA P21397 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
MAOB P27338 2/20 0.46
HTR2A P28223 1/20 0.46
IDO1 P14902 1/20 0.45
HDAC3 O15379 1/20 0.45
MAPK1 P28482 1/20 0.45
ADRA1A P35348 1/20 0.45
HDAC4 P56524 1/20 0.45
SLC6A3 Q01959 1/20 0.45
HDAC1 Q13547 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
HDAC7 Q8WUI4 1/20 0.45
HDAC2 Q92769 1/20 0.45
HDAC10 Q969S8 1/20 0.45
HDAC11 Q96DB2 1/20 0.45
HDAC8 Q9BY41 1/20 0.45
HDAC6 Q9UBN7 1/20 0.45
HDAC9 Q9UKV0 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705290 0.93 MAOA (0.52) SIGMAR1MAOATDP1MAOBHTR2A
SCHEMBL705956 0.85 TDP1 (0.52) SIGMAR1MAOATDP1MAOBHTR2A
SCHEMBL17386453 0.80 TDP1 (0.52) SIGMAR1MAOATDP1MAOBHTR2A
SCHEMBL476048 0.76 L3MBTL1 (0.48) SIGMAR1MAOAMAOBHTR2AADRA1A
SCHEMBL10606178 0.76 HDAC3 (0.50) SIGMAR1MAOATDP1MAOBHTR2A
SCHEMBL22283487 0.76 HDAC3 (0.50) SIGMAR1MAOATDP1MAOBHTR2A
SCHEMBL707338 0.76 SIGMAR1 (0.48) SIGMAR1MAOAMAOBHTR2AIDO1
SCHEMBL523394 0.76 SIGMAR1 (0.48) SIGMAR1MAOAMAOBHTR2AIDO1
SCHEMBL451456 0.76 MAOA (0.74) SIGMAR1MAOAMAOBHTR2AIDO1
SCHEMBL54347 0.76 HTR2A (0.70) SIGMAR1MAOATDP1MAOBHTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed