SCHEMBL706759

SCHEMBL706759

CC(C)(C)O[SiH](CCc1ccccc1)OC(C)(C)C

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38
ALOX12 P18054 1/20 0.38
CASP1 P29466 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TAAR1 Q96RJ0 4/20 0.38
ATM Q13315 1/20 0.38
SLC6A2 P23975 1/20 0.38
TDP1 Q9NUW8 2/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
CYP2A6 P11509 1/20 0.37
HTR2A P28223 1/20 0.37
LOXL2 Q9Y4K0 1/20 0.37
IDO1 P14902 1/20 0.35
AOC3 Q16853 1/20 0.35
HDAC3 O15379 1/20 0.35
MAPK1 P28482 1/20 0.35
ADRA1A P35348 1/20 0.35
HDAC4 P56524 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706875 0.89 ADRA1A (0.41) SLC6A2SMN1; SMN2HTR2AIDO1AOC3
SCHEMBL704924 0.87 L3MBTL1 (0.43) SMN1; SMN2IDO1HDAC3MAPK1ADRA1A
SCHEMBL703702 0.79 SLC6A2 (0.40) ALDH1A1TAAR1SLC6A2IDO1MAPK1
SCHEMBL14841098 0.78 SIGMAR1 (0.35) HPGDTAAR1ATMSLC6A2CYP2A6
SCHEMBL296206 0.77 ALDH1A1 (0.42) ALDH1A1HPGDALOX15ALOX12CASP1
SCHEMBL115877 0.73 TP53 (0.41) ALDH1A1HPGDALOX15ALOX12CASP1
SCHEMBL704612 0.71 ALDH1A1 (0.41) ALDH1A1HPGDALOX15ALOX12CASP1
SCHEMBL706073 0.71 IDO1 (0.38) ALDH1A1HPGDALOX15ALOX12CASP1
SCHEMBL704103 0.69 ALDH1A1 (0.50) ALDH1A1HPGDTDP1SMN1; SMN2HDAC3
SCHEMBL7749434 0.69 ALDH1A1 (0.48) ALDH1A1HPGDALOX15ALOX12CASP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed