SCHEMBL706875

SCHEMBL706875

CC(C)(C)O[SiH](CCCc1ccccc1)OC(C)(C)C

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRA1A P35348 2/20 0.41
SLC6A3 Q01959 2/20 0.41
IDO1 P14902 1/20 0.41
HDAC3 O15379 1/20 0.41
MAPK1 P28482 1/20 0.41
HDAC4 P56524 1/20 0.41
HDAC1 Q13547 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
HDAC7 Q8WUI4 1/20 0.41
HDAC2 Q92769 1/20 0.41
HDAC10 Q969S8 1/20 0.41
HDAC11 Q96DB2 1/20 0.41
HDAC8 Q9BY41 1/20 0.41
HDAC6 Q9UBN7 1/20 0.41
HDAC9 Q9UKV0 1/20 0.41
HDAC5 Q9UQL6 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.40
POLB P06746 1/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704924 0.95 L3MBTL1 (0.43) ADRA1ASLC6A3IDO1HDAC3MAPK1
SCHEMBL706759 0.89 ALDH1A1 (0.38) ADRA1ASLC6A3IDO1HDAC3MAPK1
SCHEMBL705764 0.79 IDO1 (0.45) ADRA1ASLC6A3IDO1L3MBTL1MEN1
SCHEMBL703702 0.76 SLC6A2 (0.40) IDO1MAPK1SLC6A2
SCHEMBL707896 0.76 CHRM2 (0.44) ADRA1ASLC6A3IDO1L3MBTL1MEN1
SCHEMBL705468 0.74 SIGMAR1 (0.42) IDO1L3MBTL1KMT2ASIGMAR1
SCHEMBL704369 0.73 L3MBTL1 (0.47) IDO1L3MBTL1MEN1KMT2ASIGMAR1
SCHEMBL704670 0.73 DRD2 (0.44) ADRA1ASLC6A3IDO1HDAC3MAPK1
SCHEMBL702245 0.73 IDO1 (0.44) ADRA1ASLC6A3IDO1L3MBTL1MEN1
SCHEMBL13089616 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed