SCHEMBL703702

SCHEMBL703702

CC(C)(C)O[SiH](Cc1ccccc1)OC(C)(C)C

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.40
TAAR1 Q96RJ0 1/20 0.40
CYP2D6 P10635 2/20 0.38
LMNA P02545 1/20 0.38
TP53 P04637 1/20 0.37
TSHR P16473 2/20 0.36
CALM1 P0DP23 1/20 0.35
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
PRMT1 Q99873 1/20 0.34
AKT1 P31749 2/20 0.34
TRPA1 O75762 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MAPK1 P28482 1/20 0.33
LTA4H P09960 1/20 0.33
IDO1 P14902 1/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA7 P43166 1/20 0.33
CA14 Q9ULX7 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706759 0.79 ALDH1A1 (0.38) SLC6A2TAAR1CYP2D6LMNAALDH1A1
SCHEMBL8460641 0.79 SLC6A2 (0.34) SLC6A2TAAR1CYP2D6LMNATP53
SCHEMBL14841298 0.78 TRPA1 (0.38) SLC6A2TAAR1CYP2D6LMNATP53
SCHEMBL706875 0.76 ADRA1A (0.41) SLC6A2MAPK1IDO1
SCHEMBL49102 0.75 TP53 (0.42) TP53TSHRCALM1CYP3A4TRPA1
SCHEMBL1314806 0.73 SLC6A2 (0.43) SLC6A2TAAR1CYP2D6LMNATP53
SCHEMBL9505652 0.73 TP53 (0.40) TP53TSHRCALM1ALDH1A1LTA4H
SCHEMBL21112710 0.71 TP53 (0.39) TP53TSHRCALM1CYP3A4TRPA1
SCHEMBL123780 0.71 TP53 (0.44) SLC6A2TAAR1CYP2D6LMNATP53
SCHEMBL18297901 0.71 TSHR (0.43) SLC6A2TAAR1CYP2D6LMNATP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed