SCHEMBL71029

SCHEMBL71029

C=Cc1c(OC(C)=O)ccc2ccccc12

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MTNR1A P48039 1/20 0.48
MTNR1B P49286 1/20 0.48
NCEH1 Q6PIU2 7/20 0.47
CYP1A2 P05177 2/20 0.45
CYP2C9 P11712 2/20 0.45
CYP2C19 P33261 2/20 0.45
CYP3A4 P08684 1/20 0.45
GAA P10253 2/20 0.44
TDP1 Q9NUW8 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
MAPT P10636 3/20 0.44
HPGD P15428 3/20 0.44
KDM4E B2RXH2 2/20 0.44
ALDH1A1 P00352 2/20 0.43
SLC22A6 Q4U2R8 1/20 0.43
LMNA P02545 3/20 0.43
NPSR1 Q6W5P4 2/20 0.43
SMN1; SMN2 Q16637 2/20 0.43
MITF O75030 1/20 0.43
HSP90AA1 P07900 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Formamide SCHEMBL9731210 0.94 MTNR1A (0.44) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL3268742 0.86 MAPT (0.60) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL7888114 0.81 MTNR1A (0.43) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL2551627 0.81 MTNR1A (0.51) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL2551628 0.81 MTNR1A (0.51) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL1087812 0.79 ALDH1A1 (0.46) GAATDP1L3MBTL1MAPTHPGD
SCHEMBL7524368 0.78 ALDH1A1 (0.52) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL7526612 0.78 ALDH1A1 (0.52) MTNR1AMTNR1BNCEH1CYP1A2CYP2C9
SCHEMBL12199931 0.78 MAPT (0.58) NCEH1CYP1A2CYP2C9CYP2C19CYP3A4
SCHEMBL3698427 0.78 KDM4E (0.63) MTNR1AMTNR1BCYP1A2CYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 656 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260147274-A1 SULFONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-28 US disclosed
CN-116560190-B Resist material and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-26 CN disclosed
US-20260139086-A1 ONIUM SALT TYPE MONOMER, MONOMERIC PHOTO-ACID GENERATOR, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-21 US disclosed
US-20260133491-A1 ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-14 US disclosed
US-20260133490-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-14 US disclosed
US-20260133492-A1 ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-14 US disclosed
CN-122010809-A Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2026-05-12 CN disclosed
US-12625429-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-12 US disclosed
CN-122010808-A Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method 信越化学工业株式会社 2026-05-12 CN disclosed
US-20260110967-A1 SULFONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-23 US disclosed
US-7887991-B2 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-15 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-7655378-B2 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-02 US disclosed
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090202940-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090202947-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO.,LTD (JP) 2009-08-13 US disclosed
US-20080020290-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20070032525-A1 Piperidine derivatives having ccr3 antagonism TEIJIN LIMITED, A JAPANESE BODY CORPORATE (JP) 2007-02-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12625429-B2 Resist composition and pattern forming process NAF1, CLIC1, H1-4 MTNR1A 526/4885MTNR1B 960/4885NCEH1 2131/4885
US-20260133492-A1 ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS CACNA1F, NAF1, NSUN2 MTNR1A 1727/4885MTNR1B 2266/4885NCEH1 1608/4885
US-20070032525-A1 Piperidine derivatives having ccr3 antagonism CCR3, CCR1, CCR4 MTNR1A 595/4885MTNR1B 720/4885NCEH1 726/4885
US-20260133491-A1 ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS AGTR1, NAF1, NHERF1 MTNR1A 2089/4885MTNR1B 2621/4885NCEH1 928/4885
US-20260133490-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS NAF1, FOXM1, CACNA1F MTNR1A 1537/4885MTNR1B 2008/4885NCEH1 2578/4885
US-20260147274-A1 SULFONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS RSU1, ETV6, NAF1 MTNR1A 1626/4885MTNR1B 2065/4885NCEH1 2907/4885
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same PRRC2A, PUF60, POLR2B MTNR1A 4126/4885MTNR1B 4047/4885NCEH1 4105/4885
US-20260139086-A1 ONIUM SALT TYPE MONOMER, MONOMERIC PHOTO-ACID GENERATOR, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS CLTA, ARCN1, CLTB MTNR1A 2732/4885MTNR1B 3019/4885NCEH1 2781/4885
US-20260110967-A1 SULFONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS NSUN2, NAF1, SNU13 MTNR1A 2057/4885MTNR1B 2656/4885NCEH1 1955/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.