Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC6A2 | P23975 | 1/20 | 0.37 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.37 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.37 |
| ▸ | KIF11 | P52732 | 1/20 | 0.36 |
| ▸ | ACACB | O00763 | 3/20 | 0.33 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | PPARA | Q07869 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | PPARG | P37231 | 1/20 | 0.31 |
| ▸ | ABL1 | P00519 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL248257 | 0.91 | KIF11 (0.40) | SLC6A2SLC6A4SLC6A3KIF11ACACB | |
| SCHEMBL13131105 | 0.89 | NFE2L2 (0.34) | SLC6A2SLC6A4SLC6A3KIF11CYP1A2 | |
| SCHEMBL31474482 | 0.86 | ALDH1A1 (0.41) | MEN1KMT2AKDM4ECYP3A4MAPT | |
| SCHEMBL26746 | 0.84 | SLC6A2 (0.44) | SLC6A2SLC6A4SLC6A3KIF11ACACB | |
| SCHEMBL13098231 | 0.83 | MAPT (0.50) | ACACBPPARAMAPTPPARG | |
| SCHEMBL8073829 | 0.78 | PPARA (0.37) | MEN1KMT2APPARAKDM4EMAPT | |
| SCHEMBL198046 | 0.76 | RIPK1 (0.43) | SLC6A2SLC6A4SLC6A3KIF11ACACB | |
| SCHEMBL18866585 | 0.76 | MAPT (0.44) | SLC6A2SLC6A4SLC6A3KIF11ACACB | |
| SCHEMBL19339945 | 0.76 | MAPT (0.44) | SLC6A2SLC6A4SLC6A3KIF11ACACB | |
| SCHEMBL5285766 | 0.74 | CA1 (0.61) | MEN1KMT2AKDM4ECYP3A4MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 128 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119827496-A | Method for testing acid strength and acid production efficiency by using photoetching machine and application | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| CN-119827495-A | Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027903-A1 | Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-20230400770-A1 | Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400770-A1 | Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20100248149-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-02 | — | — | US | disclosed |
| US-20100063232-A1 | POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN | JSR CORPORATION (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100040977-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | JSR CORPORATION (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20070054214-A1 | Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions | JSR CORPORATION (JP) | 2007-03-08 | — | — | US | disclosed |
| US-6656660-B1 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-12-02 | — | — | US | disclosed |
| US-6416928-B1 | HALOGENONIUM OR SULFONIUM SALTS OF SULFONATED DIPHENYLALKANE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-07-09 | — | — | US | disclosed |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| EP-1024406-A1 | Resist composition | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 2000-08-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100063232-A1 | POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN | ASIC1, RER1, RPS10 | SLC6A2 2794/4885SLC6A4 2409/4885SLC6A3 2758/4885 |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | MRE11, RAD51, MRPS22 | SLC6A2 3816/4885SLC6A4 3719/4885SLC6A3 3235/4885 |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | AFF1, RER1, AFF4 | SLC6A2 3282/4885SLC6A4 2927/4885SLC6A3 3493/4885 |
| US-20240027903-A1 | Resist Material And Patterning Process | LBR, HNRNPU, EWSR1 | SLC6A2 1213/4885SLC6A4 522/4885SLC6A3 940/4885 |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | ABL1, PI4K2B, FES | SLC6A2 1985/4885SLC6A4 525/4885SLC6A3 686/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.