SCHEMBL248257

SCHEMBL248257

CC(C)(C)Oc1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 1/20 0.40
SLC6A2 P23975 1/20 0.33
SLC6A4 P31645 1/20 0.33
SLC6A3 Q01959 1/20 0.33
RIPK1 Q13546 1/20 0.33
PPARA Q07869 4/20 0.33
PPARG P37231 4/20 0.33
KDM1A O60341 1/20 0.33
CYP2C19 P33261 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
MAPT P10636 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2D6 P10635 1/20 0.32
MAPK1 P28482 2/20 0.32
LTA4H P09960 1/20 0.31
CYP2C9 P11712 1/20 0.31
PPARD Q03181 1/20 0.31
CA4 P22748 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7270832 0.91 SLC6A2 (0.37) KIF11SLC6A2SLC6A4SLC6A3RIPK1
SCHEMBL5707382 0.85 ALDH1A1 (0.36) KIF11PPARAPPARGCYP2C19MEN1
Trifluoromethanesulfonic Acid SCHEMBL64774 0.84 GPR3 (0.37) KIF11PPARAKDM1AMEN1KMT2A
SCHEMBL31474464 0.82 KIF11 (0.40) KIF11PPARAPPARGKDM1AMEN1
SCHEMBL8073829 0.82 PPARA (0.37) PPARACYP2C19MEN1KMT2AMAPT
SCHEMBL13131105 0.82 NFE2L2 (0.34) KIF11SLC6A2SLC6A4SLC6A3PPARG
SCHEMBL3973053 0.81 POLB (0.33) CYP2C19MEN1KMT2ACYP1A2CYP2C9
SCHEMBL64191 0.81 HTT (0.43) CYP2C19MEN1KMT2AMAPTCYP1A2
SCHEMBL93074 0.79 CA4 (0.48) KIF11SLC6A2SLC6A4SLC6A3RIPK1
SCHEMBL10405698 0.79 CA4 (0.48) KIF11SLC6A2SLC6A4SLC6A3RIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 639 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
US-9221928-B2 Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method CENTRAL GLASS COMPANY, LIMITED (JP) 2015-12-29 US claimed
US-9075306-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 US claimed
US-8632939-B2 Polymer, chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-01-21 US claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-2362268-B1 Polymer, chemically amplified positive resist compositions and pattern forming process SHINETSU CHEMICAL CO (JP) 2013-01-23 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
US-6440634-B1 MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-08-27 US claimed
US-12585186-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031421-A1 Chemical amplification resist compositions SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12585186-B2 Photoacid generator, chemically amplified resist composition, and patterning process LBR, LIFR, LEF1 KIF11 4183/4885SLC6A2 3614/4885SLC6A4 3107/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.