SCHEMBL75012

SCHEMBL75012

O=C(O)C1(C(F)(F)F)CC2C=CC1C2

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 2/20 0.33
CYP2D6 P10635 1/20 0.33
HTT P42858 2/20 0.30
LMNA P02545 1/20 0.30
CYP3A4 P08684 1/20 0.30
CYP2C9 P11712 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
KDM4E B2RXH2 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23694120 1.00 CYP2C19 (0.33) CYP2C19CYP2D6HTTLMNACYP3A4
SCHEMBL18772329 1.00 CYP2C19 (0.33) CYP2C19CYP2D6HTTLMNACYP3A4
SCHEMBL13525789 0.84 CYP2C19 (0.35) CYP2C19CYP2D6HTTLMNACYP3A4
SCHEMBL16894040 0.83 CYP2D6 (0.34) CYP2C19CYP2D6
SCHEMBL1206903 0.82 CYP2D6 (0.36) CYP2C19CYP2D6
SCHEMBL14567551 0.80 CYP2C19 (0.33) CYP2C19CYP2D6HTTLMNACYP3A4
SCHEMBL24221420 0.78
SCHEMBL2382567 0.78 CYP2D6 (0.31) CYP2C19CYP2D6
SCHEMBL13744383 0.77 ABHD6 (0.32)
SCHEMBL13744776 0.77 HTT (0.32) CYP2C19CYP2D6HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 276 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-7045582-B2 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process MARUZEN PETROCHEMICAL CO. LTD. (JP) 2006-05-16 US disclosed
US-20060068324-A1 Positive photosensitive resin and novel dithiol compound MARUZEN PETROCHEMICAL CO., LTD. (JP) 2006-03-30 US disclosed
US-20060058480-A1 Polymerizable monomer polymeric compound resin compositions for photoresist and method for producing semiconductor DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-03-16 US disclosed
US-20060058433-A1 Method for prevention of increase in particles in copolymer for semiconductor resist MARUZEN PETROCHEMICAL CO., LTD. (JP) 2006-03-16 US disclosed
US-20050287474-A1 Resist polymer and method for producing the polymer YAMAGISHI TAKANORI 2005-12-29 US disclosed
US-20050282985-A1 FLUORINE-ATOM-CONTAINING POLYMERIZABLE UNSATURATED-MONOMER, FLUORINE-ATOM-CONTAINING POLYMERIC COMPOUND AND PHOTORESIST RESIN COMPOSITION DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-12-22 US disclosed
US-20050131184-A1 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process MARUZEN PETROCHEMICAL CO., LTD. (JP) 2005-06-16 US disclosed
US-20050096447-A1 Production process of copolymer for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2005-05-05 US disclosed
US-20040181023-A1 Novel thiol compound, copolymer and method for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2004-09-16 US disclosed
US-20040167298-A1 suitable for fine pattern formation in the semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2004-08-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 CYP2C19 4784/4885CYP2D6 4375/4885HTT 1252/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 CYP2C19 4159/4885CYP2D6 2665/4885HTT 153/4885
US-20050282985-A1 FLUORINE-ATOM-CONTAINING POLYMERIZABLE UNSATURATED-MONOMER, FLUORINE-ATOM-CONTAINING POLYMERIC COMPOUND AND PHOTORESIST RESIN COMPOSITION AFF1, AFF2, FPR1 CYP2C19 2474/4885CYP2D6 3399/4885HTT 4398/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.