Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 3/20 | 0.41 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | CA5A | P35218 | 1/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | CES1 | P23141 | 2/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | GPR3 | P46089 | 1/20 | 0.33 |
| ▸ | SRC | P12931 | 1/20 | 0.32 |
| ▸ | HTR6 | P50406 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | FAAH | O00519 | 1/20 | 0.31 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.31 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.31 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL3249775 | 0.92 | GPR3 (0.44) | PTPN1TSHRSMN1; SMN2CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL29825847 | 0.91 | GPR3 (0.43) | PTPN1TSHRSMN1; SMN2CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL756009 | 0.85 | CES2 (0.41) | CES1ALDH1A1HSD11B1 | |
| SCHEMBL2701828 | 0.84 | CA2 (0.39) | PTPN1TSHRSMN1; SMN2CA1CA2 | |
| Sulfuric Acid SCHEMBL5798234 | 0.84 | TSHR (0.48) | TSHRSMN1; SMN2CA1CA2CA5A | |
| Trifluoromethanesulfonic Acid SCHEMBL2985949 | 0.83 | GPR3 (0.35) | PTPN1CA1CA2HSD11B1GPR3 | |
| Trifluoromethanesulfonic Acid SCHEMBL3966822 | 0.83 | PTPN1 (0.39) | PTPN1TSHRSMN1; SMN2CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL37032 | 0.83 | GPR3 (0.50) | PTPN1TSHRCA1CA2CA5A | |
| Trifluoromethanesulfonic Acid SCHEMBL31155703 | 0.83 | GPR3 (0.50) | PTPN1TSHRCA1CA2CA5A | |
| Trifluoromethanesulfonic Acid SCHEMBL2429658 | 0.82 | HSD11B1 (0.33) | PTPN1TSHRSMN1; SMN2CA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 356 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113929906-B | Self-crosslinkable isocyanurate polymer and anti-reflection coating composition, preparation method thereof and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2023-07-04 | — | — | CN | claimed |
| US-20230152699-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2023-05-18 | — | — | US | claimed |
| US-8067148-B2 | Pattern forming method | PANASONIC CORPORATION (JP) | 2011-11-29 | — | — | US | claimed |
| US-7943285-B2 | Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing | PANASONIC CORPORATION (JP) | 2011-05-17 | — | — | US | claimed |
| CN-101835735-A | Bottom antireflective coating composition | AZ ELECTRONIC MATERIALS USA | 2010-09-15 | — | — | CN | claimed |
| US-20100221672-A1 | PATTERN FORMING METHOD | PANASONIC CORPORATION (JP) | 2010-09-02 | — | — | US | claimed |
| CN-100595673-C | Positive type photosensitive paste composition for PDP electrode, PDP electrode prepared therefrom, and PDP comprising the PDP electrode | SAMSUNG SDI CO LTD | 2010-03-24 | — | — | CN | claimed |
| CN-101522694-A | Photoactive compounds | AZ ELECTRONIC MATERIALS USA (US) | 2009-09-02 | — | — | CN | claimed |
| CN-100494226-C | Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-06-03 | — | — | CN | claimed |
| US-20080227038-A1 | PATTERN FORMATION METHOD | PANASONIC CORPORATION (JP) | 2008-09-18 | — | — | US | claimed |
| CN-1289069-A | Photo-resist composition containing photo-alkali-generator and photo-acid-generator | HYUNDAI ELECTRONICS IND (KR) | 2001-03-28 | — | — | CN | claimed |
| CN-1285529-A | Monomer for cross-linkage agent containing double bond and photoresist copolymer containing same | HYUNDAI ELECTRONICS IND (JP) | 2001-02-28 | — | — | CN | claimed |
| CN-1263612-A | Chemically amplified resist composition | CLARIANT INT LTD (CH) | 2000-08-16 | — | — | CN | claimed |
| CN-1258670-A | Cross-linking monomer using for photoresist and process for producing photoresist polymer using the same | HYUNDAI ELECTRONICS IND (KR) | 2000-07-05 | — | — | CN | claimed |
| CN-1255652-A | Cross linking agent for photoslushing compound, and photoslushing compound compsns. containing same cross linking agent | HYUNDAI ELECTRONICS IND (KR) | 2000-06-07 | — | — | CN | claimed |
| CN-1255653-A | Cross linking agent for photoslushing compound, and photoslushing compound compsns. containing same cross linking agent | HYUNDAI ELECTRONICS IND (KR) | 2000-06-07 | — | — | CN | claimed |
| CN-1250778-A | Novel monomer and its polymer used for anti-photoetching agent, and their compositions | HYUNDAI ELECTRONICS IND (KR) | 2000-04-19 | — | — | CN | claimed |
| CN-1247858-A | Photoresist monomer, its copolymer and composition using the same | HYUNDAI ELECTRONICS IND (KR) | 2000-03-22 | — | — | CN | claimed |
| CN-1224728-A | Photosensitive polymer and chemically amplified resist composition thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 1999-08-04 | — | — | CN | claimed |
| CN-1187495-A | Method and apparatus for using argon fluoride photoresist | HYUNDAI ELECTRONICS IND (KR) | 1998-07-15 | — | — | CN | claimed |