SCHEMBL76679

SCHEMBL76679

C=C(C)C(=O)Oc1ccc2c(c1)CCC(=O)O2

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.47
ATM Q13315 1/20 0.47
MAOB P27338 5/20 0.46
MAOA P21397 4/20 0.46
ELANE P08246 1/20 0.40
ALDH1A1 P00352 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
MAPT P10636 1/20 0.40
CA2 P00918 1/20 0.39
CA5A P35218 1/20 0.39
CA12 O43570 2/20 0.36
CA9 Q16790 2/20 0.36
PTGS2 P35354 1/20 0.36
ALDH2 P05091 1/20 0.35
ALDH3A1 P30838 1/20 0.35
KDM4E B2RXH2 1/20 0.34
GLA P06280 1/20 0.34
POLB P06746 1/20 0.34
GAA P10253 1/20 0.34
TDP1 Q9NUW8 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL75400 0.89 KMT2A (0.47) KMT2AATMMAOBMAOAELANE
SCHEMBL76684 0.88 MAOA (0.60) KMT2AATMMAOBMAOAELANE
SCHEMBL23963404 0.81 MAOB (0.50) KMT2AMAOBMAOAALDH1A1SMN1; SMN2
SCHEMBL91175 0.81 KMT2A (0.46) KMT2AATMELANEALDH1A1SMN1; SMN2
SCHEMBL19335475 0.80 KDM4E (0.47) KMT2AMAOBMAOAELANEALDH1A1
SCHEMBL75279 0.80 MAOA (0.47) KMT2AATMMAOBMAOAELANE
SCHEMBL19718935 0.80 MAOA (0.47) KMT2AMAOBMAOAELANEALDH1A1
SCHEMBL75170 0.78 KMT2A (0.44) KMT2AATMELANEALDH1A1SMN1; SMN2
SCHEMBL783519 0.78 KMT2A (0.51) KMT2AATMELANEALDH1A1SMN1; SMN2
SCHEMBL30539317 0.77 CA2 (0.58) KMT2AMAOBMAOAALDH1A1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 469 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10509314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-12-17 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10222696-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-05 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10509314-B2 Resist composition and patterning process SRMS, SLC11A2, PCNA KMT2A 2376/4885ATM 1680/4885MAOB 4312/4885
US-10222696-B2 Resist composition and patterning process SLC11A2, GRN, PGF KMT2A 2626/4885ATM 2185/4885MAOB 3931/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.