Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 5/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.41 |
| ▸ | MEN1 | O00255 | 3/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.41 |
| ▸ | HTT | P42858 | 2/20 | 0.41 |
| ▸ | PLK1 | P53350 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.36 |
| ▸ | TSHR | P16473 | 4/20 | 0.36 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.35 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.35 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.33 |
| ▸ | PDE4A | P27815 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7786859 | 1.00 | MAPT (0.41) | MAPTSMN1; SMN2MEN1KMT2AHTT | |
| SCHEMBL19418706 | 0.89 | PLA2G7 (0.36) | MAPTHSD17B10PLA2G7 | |
| SCHEMBL18431381 | 0.89 | PLA2G7 (0.36) | MAPTHSD17B10PLA2G7 | |
| SCHEMBL9891196 | 0.89 | PLA2G7 (0.36) | MAPTHSD17B10PLA2G7 | |
| SCHEMBL7781770 | 0.86 | MAPT (0.38) | MAPTSMN1; SMN2MEN1KMT2AHTT | |
| SCHEMBL7781772 | 0.84 | MAPT (0.36) | MAPTSMN1; SMN2MEN1KMT2AHTT | |
| SCHEMBL10233179 | 0.83 | ENPP2 (0.37) | MAPTSMN1; SMN2MEN1KMT2AHTT | |
| SCHEMBL5229634 | 0.83 | ALDH1A1 (0.36) | MAPTSMN1; SMN2MEN1KMT2AALDH1A1 | |
| SCHEMBL14375142 | 0.83 | HSD17B10 (0.38) | MAPTSMN1; SMN2HTTALDH1A1LMNA | |
| SCHEMBL6706095 | 0.83 | ALDH1A1 (0.36) | MAPTSMN1; SMN2MEN1KMT2AALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20010037037-A1 | Oximesulfonic acid esters and the use thereof as latent sulfonic acids | CIBA SPEICIALTY CHEMICALS CORP. | 2001-11-01 | — | — | US | claimed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170059990-A1 | RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9411230-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-09 | — | — | US | disclosed |
| US-20130040096-A1 | PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSTIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-02-14 | — | — | US | disclosed |
| US-20130029255-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029255-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20120301817-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120034559-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| EP-2413191-A1 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | Fujifilm Corporation (JP) | 2012-02-01 | — | — | EP | disclosed |
| WO-2011149035-A1 | PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-12-01 | — | — | WO | disclosed |
| WO-2011093520-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-08-04 | — | — | WO | disclosed |
| US-20010037037-A1 | Oximesulfonic acid esters and the use thereof as latent sulfonic acids | CIBA SPEICIALTY CHEMICALS CORP. | 2001-11-01 | — | — | US | disclosed |
| US-6017675-A | POLYMERIZATION CATALYST | CIBA SPECIALTY CHEMIALS CORPORATION (US) | 2000-01-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20010037037-A1 | Oximesulfonic acid esters and the use thereof as latent sulfonic acids | QSOX1, HAO2, PAH | MAPT 4475/4885SMN1; SMN2 4161/4885MEN1 4038/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.