SCHEMBL786009

SCHEMBL786009

O=C(O)C1CC2CC1C1C3CCC(C3)C21

nearest known ligand 0.41

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
SLC1A2 P43004 4/20 0.41
SLC1A1 P43005 3/20 0.41
GABRR1 P24046 5/20 0.36
PKM P14618 1/20 0.33
GABRR2 P28476 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14818195 0.92 SLC1A2 (0.39) SLC1A2SLC1A1GABRR1PKM
SCHEMBL13418022 0.85 SLC1A2 (0.35) SLC1A2SLC1A1
SCHEMBL12877955 0.81 SLC1A2 (0.33) SLC1A2SLC1A1
SCHEMBL15729907 0.79
SCHEMBL21654483 0.79 CYP1A2 (0.37) MEN1KMT2A
SCHEMBL9908326 0.79 CYP1A2 (0.37) MEN1KMT2A
SCHEMBL7699619 0.78 SLC1A2 (0.41) SLC1A2SLC1A1GABRR1PKMGABRR2
SCHEMBL7700820 0.78 SLC1A2 (0.41) SLC1A2SLC1A1GABRR1PKMGABRR2
SCHEMBL10557954 0.77 SLC1A2 (0.47) SLC1A2SLC1A1GABRR1GABRR2MEN1
SCHEMBL8995147 0.77 SLC1A2 (0.47) SLC1A2SLC1A1GABRR1GABRR2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20220206385-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-06-30 US disclosed
US-9896537-B2 Norbornanyl rosin resin and process for preparing same YU HUI (US) 2018-02-20 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9353213-B2 Functional norbornanyl ester derivatives, polymers and process for preparing same YU HUI (US) 2016-05-31 US disclosed
US-20160122469-A1 Functional norbornanyl ester derivatives, polymers and process for preparing same YU HUI (US) 2016-05-05 US disclosed
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. 2016-01-28 US disclosed
US-20070298355-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070218403-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2007-09-20 US disclosed
US-20070218403-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2007-09-20 US disclosed
US-20070060663-A1 Photocurable composition, photocurable ink composition, printing method and resist composition using the same KONICA MINOLTA MEDICAL & GRAPHIC, INC. 2007-03-15 US disclosed
US-20070060663-A1 Photocurable composition, photocurable ink composition, printing method and resist composition using the same KONICA MINOLTA MEDICAL & GRAPHIC, INC. 2007-03-15 US disclosed
US-7186495-B2 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2007-03-06 US disclosed
US-7186495-B2 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2007-03-06 US disclosed
US-7183368-B2 Negative-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160122469-A1 Functional norbornanyl ester derivatives, polymers and process for preparing same CYP1B1, DECR1, CAD SLC1A2 4179/4885SLC1A1 3827/4885GABRR1 1793/4885
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER ORAI1, STOM, SORT1 SLC1A2 4094/4885SLC1A1 3729/4885GABRR1 3518/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 SLC1A2 4627/4885SLC1A1 4295/4885GABRR1 3865/4885
US-20220206385-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN RER1, REV1, ABCC1 SLC1A2 4069/4885SLC1A1 3518/4885GABRR1 360/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.