Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.57 |
| ▸ | MAPT | P10636 | 7/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.44 |
| ▸ | TSHR | P16473 | 4/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.42 |
| ▸ | HTT | P42858 | 3/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.42 |
| ▸ | GAA | P10253 | 2/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | KCNA5 | P22460 | 1/20 | 0.42 |
| ▸ | NPC1 | O15118 | 1/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8074580 | 0.77 | RECQL (0.52) | HSD11B1ALDH1A1MEN1KMT2ANPC1 | |
| SCHEMBL8060332 | 0.74 | HSD11B1 (0.66) | HSD11B1MAPTKDM4ETSHRALDH1A1 | |
| SCHEMBL3143792 | 0.72 | ALDH1A1 (0.48) | MAPTKDM4EALDH1A1HTTSMN1; SMN2 | |
| SCHEMBL759993 | 0.72 | ALDH1A1 (0.48) | MAPTKDM4EALDH1A1HTTSMN1; SMN2 | |
| SCHEMBL3141168 | 0.71 | HTT (0.44) | HSD11B1MAPTALDH1A1HTTSMN1; SMN2 | |
| SCHEMBL2901199 | 0.69 | MAPT (0.50) | MAPTKDM4EALDH1A1HTTSMN1; SMN2 | |
| SCHEMBL17637149 | 0.69 | HSD11B1 (0.63) | HSD11B1MAPTKDM4ETSHRALDH1A1 | |
| SCHEMBL9003402 | 0.68 | HSD11B1 (0.57) | HSD11B1HTTSMN1; SMN2MEN1KMT2A | |
| SCHEMBL29207069 | 0.68 | TSHR (0.62) | HSD11B1MAPTKDM4ETSHRALDH1A1 | |
| SCHEMBL29247912 | 0.68 | NPC1 (0.61) | HSD11B1MAPTKDM4ETSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0665470-B1 | Method for forming a fine pattern | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2000-08-02 | — | — | EP | disclosed |
| EP-0440374-B1 | Chemical amplified resist material | WAKO PURE CHEM IND LTD (JP) | 1997-04-16 | — | — | EP | disclosed |
| US-5518579-A | SEMICONDUCTORS | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1996-05-21 | — | — | US | disclosed |
| EP-0665470-A2 | Method for forming a fine pattern | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-08-02 | — | — | EP | disclosed |
| US-5350660-A | Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1994-09-27 | — | — | US | disclosed |
| EP-0476865-A1 | Resist material and process for forming pattern using the same | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1992-03-25 | — | — | EP | disclosed |
| EP-0440374-A2 | Chemical amplified resist material | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1991-08-07 | — | — | EP | disclosed |