SCHEMBL8060332

SCHEMBL8060332

COc1ccc(OC)c(C(=O)CS(OS(=O)(=O)c2ccc(C)cc2)(c2ccccc2)c2ccccc2)c1

nearest known ligand 0.66

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 3/20 0.66
ALDH1A1 P00352 4/20 0.46
POLB P06746 1/20 0.46
MAPT P10636 5/20 0.44
KDM4E B2RXH2 2/20 0.44
TSHR P16473 2/20 0.44
SMN1; SMN2 Q16637 2/20 0.42
HTT P42858 2/20 0.42
KMT2A Q03164 2/20 0.42
CYP3A4 P08684 2/20 0.42
CYP2C19 P33261 2/20 0.42
CYP1A2 P05177 1/20 0.42
GAA P10253 1/20 0.42
CYP2C9 P11712 1/20 0.42
MEN1 O00255 1/20 0.42
KCNA5 P22460 1/20 0.42
NPC1 O15118 1/20 0.42
LMNA P02545 1/20 0.42
RAB9A P51151 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8074584 0.79 HSD11B1 (0.62) HSD11B1ALDH1A1MAPTSMN1; SMN2KMT2A
SCHEMBL8060330 0.74 HSD11B1 (0.57) HSD11B1ALDH1A1POLBMAPTKDM4E
SCHEMBL30209489 0.71 KMT2A (0.62) HSD11B1ALDH1A1POLBMAPTKMT2A
SCHEMBL759994 0.70 LMNA (0.51) ALDH1A1POLBMAPTKDM4ESMN1; SMN2
SCHEMBL3143801 0.70 LMNA (0.51) ALDH1A1POLBMAPTKDM4ESMN1; SMN2
SCHEMBL9548505 0.70 HSD11B1 (0.71) HSD11B1ALDH1A1POLBSMN1; SMN2KMT2A
SCHEMBL17637149 0.69 HSD11B1 (0.63) HSD11B1ALDH1A1MAPTKDM4ETSHR
SCHEMBL21436956 0.69 ALDH1A1 (0.45) HSD11B1ALDH1A1MAPTKDM4ESMN1; SMN2
SCHEMBL3141175 0.69 FFAR4 (0.47) HSD11B1POLBMAPTSMN1; SMN2HTT
SCHEMBL2545838 0.69 PAX8 (0.48) HSD11B1ALDH1A1MAPTKDM4EHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0665470-B1 Method for forming a fine pattern MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2000-08-02 EP disclosed
EP-0440374-B1 Chemical amplified resist material WAKO PURE CHEM IND LTD (JP) 1997-04-16 EP disclosed
US-5518579-A SEMICONDUCTORS MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-05-21 US disclosed
EP-0665470-A2 Method for forming a fine pattern MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1995-08-02 EP disclosed
US-5350660-A Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1994-09-27 US disclosed
EP-0476865-A1 Resist material and process for forming pattern using the same WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1992-03-25 EP disclosed
EP-0440374-A2 Chemical amplified resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1991-08-07 EP disclosed