SCHEMBL825443

SCHEMBL825443

CCC(C)(C)C(=O)Nc1ccc(OC(=O)c2ccccc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 8/20 0.56
▸ MEN1 O00255 4/20 0.56
▸ MAPT P10636 2/20 0.55
▸ TDP1 Q9NUW8 1/20 0.55
▸ L3MBTL1 Q9Y468 1/20 0.55
▸ EPHX2 P34913 1/20 0.48
▸ ALDH1A1 P00352 3/20 0.48
▸ HPGD P15428 2/20 0.48
▸ THRB P10828 1/20 0.48
▸ RAB9A P51151 2/20 0.48
▸ PKM P14618 1/20 0.48
▸ SMN1; SMN2 Q16637 4/20 0.47
▸ NPC1 O15118 1/20 0.47
▸ GAA P10253 1/20 0.47
▸ NPY2R P49146 1/20 0.47
▸ PARP10 Q53GL7 1/20 0.47
▸ LMNA P02545 1/20 0.46
▸ PDK1 Q15118 1/20 0.45
▸ PDK2 Q15119 1/20 0.45
▸ PDK3 Q15120 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825497 0.86 MAPT (0.54) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL14582701 0.81 GAA (0.51) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL825503 0.81 MAPT (0.62) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL750651 0.81 RIPK1 (0.59) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL751079 0.80 MEN1 (0.60) KMT2AMEN1MAPTL3MBTL1ALDH1A1
SCHEMBL12226380 0.79 L3MBTL1 (0.61) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL825380 0.78 NPC1 (0.58) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL825407 0.78 KMT2A (0.49) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL2159024 0.78 KMT2A (0.72) KMT2AMEN1MAPTTDP1L3MBTL1
SCHEMBL1104169 0.78 PDK1 (0.60) KMT2AMEN1MAPTTDP1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 — — US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
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