Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL845827

C[N+](C)(C)C.O

nearest known ligand 0.00

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Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 120 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109494155-B Method, apparatus and system for forming sigma-shaped source/drain lattice 格芯(美国)集成电路科技有限公司 2022-04-15 CN claimed
US-9335475-B2 Method of manufacturing an optical device having a stepwise or tapered light input/output part OKI ELECTRIC INDUSTRY CO., LTD. (JP) 2016-05-10 US claimed
US-20150086153-A1 OPTICAL DEVICE HAVING A STEPWISE OR TAPERED LIGHT INPUT/OUTPUT PART AND MANUFACTURING METHOD THEREFOR OKI ELECTRIC INDUSTRY CO., LTD. (JP) 2015-03-26 US claimed
US-5876266-A Polishing pad with controlled release of desired micro-encapsulated polishing agents INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1999-03-02 US claimed
EP-0801089-A1 Preparation of branched polycarbonates THE COUNCIL OF SCIENTIFIC &amp; INDUSTRIAL RESEARCH (IN) 1997-10-15 EP claimed
US-20250349736-A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE SUMITOMO ELECTRIC INDUSTRIES (JP) 2025-11-13 US disclosed
WO-2025071426-A1 RAPID METHOD FOR ISOLATION OF MICROPLASTICS FROM MILK, YOGURT, SOUR CREAM AND BUTTER UNIVERSITATEA "VALAHIA" DIN TÂRGOVIŞTE (RO) 2025-04-03 WO disclosed
CN-119630056-A Full-gate-all-around integrated circuit structure with differential nanowire thickness and gate oxide thickness 英特尔公司 2025-03-14 CN disclosed
EP-3827241-B1 DISSOCIATION OF BIOLOGICAL SAMPLES GOLDSBOROUGH ANDREW SIMON (FR) 2024-03-13 EP disclosed
WO-2024019139-A1 COMPOSITION 株式会社日本触媒 2024-01-25 WO disclosed
WO-2024014330-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2024-01-18 WO disclosed
US-20230341763-A1 PELLICLE, EXPOSURE ORIGINAL PLATE, EXPOSURE APPARATUS, METHOD OF MANUFACTURING PELLICLE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE MITSUI CHEMICALS, INC. (JP) 2023-10-26 US disclosed
EP-1044616-A2 Acrylic resin glove and internal surface treating agent thereof Sumitomo Rubber Industries, Ltd. (JP) 2000-10-18 EP disclosed
EP-0913921-A1 Method for manufacturing a semiconductor material integrated micractuator, in particular for a hard disc mobile read/write head, and a microactuator obtained thereby STMicroelectronics S.r.l. (IT) 1999-05-06 EP disclosed
US-5876266-A Polishing pad with controlled release of desired micro-encapsulated polishing agents INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1999-03-02 US disclosed
EP-0895276-A1 Process for manufacturing integrated microstructures of single-crystal semiconductor material STMicroelectronics S.r.l. (IT) 1999-02-03 EP disclosed
US-5549989-A ELECTRODES ARE TRANSITION METAL OXIDES CAPABLE OF FORMING MULTIPLE OXIDES, BUT NOT CAPABLE OF FORMING METAL HYDRIDES MOTOROLA, INC. (US) 1996-08-27 US disclosed
US-5215973-A Treating anhydrous form with water; crystallization from organic solvent of medium polarity; antilipemic agents MAGIS FARMACEUTICI S.P.A. (IT) 1993-06-01 US disclosed
EP-0502357-A1 Optically active and racemic hydrated diacetylesters of alpha-glycero-phosphoryl-choline MAGIS FARMACEUTICI S.p.A. (IT) 1992-09-09 EP disclosed
US-5063134-A Silicon-containing novolaks for multilayer photoresists developed by an aqueous alkaline solution; oxygen-plasma resistance; resolution KABUSHIKI KAISHA TOSHIBA (JP) 1991-11-05 US disclosed