SCHEMBL86347

SCHEMBL86347

C=C(C)c1cc(C(O)(C(F)(F)F)C(F)(F)F)cc(C(O)(C(F)(F)F)C(F)(F)F)c1

nearest known ligand 0.39

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 14/20 0.39
NR1H3 Q13133 14/20 0.39
SMN1; SMN2 Q16637 2/20 0.38
MEN1 O00255 1/20 0.37
ALOX15 P16050 1/20 0.37
TSHR P16473 1/20 0.37
MAPK1 P28482 1/20 0.37
KMT2A Q03164 1/20 0.37
HSD17B10 Q99714 1/20 0.37
MLYCD O95822 1/20 0.35
CES2 O00748 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15582365 0.91 NR1H2 (0.35) NR1H2NR1H3SMN1; SMN2MEN1ALOX15
SCHEMBL25779689 0.82 HSD11B1 (0.39) NR1H3CES2
SCHEMBL15582371 0.81 HTT (0.45) NR1H3TSHRCES2
SCHEMBL20615653 0.80 CES2 (0.54) CES2
SCHEMBL86047 0.79 NR1H3 (0.53) NR1H2NR1H3SMN1; SMN2MLYCD
SCHEMBL8586265 0.79 NR1H2 (0.48) NR1H2NR1H3SMN1; SMN2MEN1ALOX15
SCHEMBL9657149 0.76 L3MBTL1 (0.33) TSHR
SCHEMBL21347765 0.73 GABRA1 (0.41) SMN1; SMN2MEN1ALOX15MAPK1KMT2A
SCHEMBL23059982 0.73 GABRA1 (0.50) NR1H2NR1H3SMN1; SMN2MEN1ALOX15
SCHEMBL10215034 0.73 MLYCD (0.48) NR1H2NR1H3SMN1; SMN2MEN1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9507262-B2 Resist top-coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-29 US disclosed
US-9274428-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-01 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-20150234274-A1 RESIST TOP-COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-08-20 US disclosed
US-8951712-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20150030983-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-01-29 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140080064-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed