SCHEMBL865331

SCHEMBL865331

C=C(C)C(=O)OCC(=O)OC(=O)COC(=O)C(=C)C

nearest known ligand 0.50

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.50
THRB P10828 1/20 0.47
ALDH1A1 P00352 4/20 0.44
TDP1 Q9NUW8 3/20 0.35
HSD17B10 Q99714 1/20 0.35
POLB P06746 1/20 0.34
APEX1 P27695 1/20 0.34
HTT P42858 1/20 0.34
MGAM O43451 1/20 0.33
GAA P10253 1/20 0.33
SI P14410 1/20 0.33
MGAM2 Q2M2H8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10714365 0.92 TSHR (0.44) TSHRTHRBALDH1A1TDP1HSD17B10
SCHEMBL27646215 0.91 TSHR (0.47) TSHRTHRBALDH1A1TDP1HSD17B10
SCHEMBL17240329 0.91 TSHR (0.47) TSHRTHRBALDH1A1TDP1HSD17B10
SCHEMBL865332 0.91 TSHR (0.47) TSHRTHRBALDH1A1TDP1HSD17B10
SCHEMBL771193 0.88 ALDH1A1 (0.56) TSHRTHRBALDH1A1MGAMGAA
SCHEMBL7096809 0.86 TSHR (0.42) TSHRTHRBALDH1A1TDP1POLB
SCHEMBL4647263 0.84 TSHR (0.41) TSHRTHRBALDH1A1
SCHEMBL2628305 0.84 THRB (0.55) TSHRTHRBALDH1A1TDP1POLB
SCHEMBL1656329 0.84 ALDH1A1 (0.54) TSHRTHRBALDH1A1TDP1HSD17B10
SCHEMBL19998241 0.82 TSHR (0.40) TSHRTHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10131730-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-11-20 US disclosed
EP-2993520-B1 RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2017-03-08 EP disclosed
US-9458144-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-04 US disclosed
US-20160152755-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-02 US disclosed
EP-2993520-A1 RESIST COMPOSITION AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-03-09 EP disclosed
US-20150322027-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-12 US disclosed
US-9040222-B2 Polymerizable tertiary ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-8999630-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-07 US disclosed
US-8835094-B2 Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-8795946-B2 Polymerizable ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
US-20130189620-A1 POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-25 US disclosed
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-07 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RER1, AFF1, RFT1 TSHR 2112/4885THRB 2351/4885ALDH1A1 229/4885
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, DOT1L, H1-0 TSHR 3165/4885THRB 2699/4885ALDH1A1 1319/4885
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS ARFIP2, ARF1, ARF4 TSHR 3864/4885THRB 3439/4885ALDH1A1 3196/4885
US-20150322027-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ELL, RPS17, EEF1A1 TSHR 4770/4885THRB 4718/4885ALDH1A1 1187/4885
US-20130189620-A1 POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS EEF1A1, ELL, LAS1L TSHR 3226/4885THRB 3595/4885ALDH1A1 1849/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.